InP-based transverse junction light-emitting diodes for white-light generation at infrared wavelengths

IEEE Photonics Technology Letters

Volumn 18, Issue 19, 2006, Pages 2053-2055

  Shi, J W ^a   Hung, T J ^a   Chen, Y Y ^a   Wu, Y S ^a   Lin, Wei ^b   Yang, Ying Jay ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b Land Mark Optoelectronics Corporation   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Light emitting diodes (LEDs); Semiconductor optical amplifiers (SOAs)

Indexed keywords

CARRIER DISTRIBUTIONS; CENTER WAVELENGTH; INFRARED WAVELENGTHS; INP; LIGHT-EMITTING DIODES (LEDS); MULTIPLE QUANTUM WELLS; NONUNIFORM; OPTICAL BAND WIDTH; P-N JUNCTION; WHITE LIGHT; WHITE-LIGHT GENERATION;

BANDWIDTH; DIODES; LIGHT EMISSION; OPTICAL SWITCHES; SEMICONDUCTOR DIODES; SEMICONDUCTOR OPTICAL AMPLIFIERS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 33845805945     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.883296     Document Type: Article

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