Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions

IEEE Photonics Technology Letters

Volumn 20, Issue 6, 2008, Pages 449-451

  Shi, J W ^a   Chen, C C ^a   Wang, C K ^a   Lin, C S ^a   Sheu, J K ^b   Lai, W C ^b   Kuo, C H ^a   Tun, C J ^a   Yang, T H ^a   Tsao, F C ^a   Chyi, J I ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

GaN light emitting diodes (LEDs); White light generation

Indexed keywords

CURRENT VOLTAGE; DUAL-WAVELENGTH; DYNAMIC MEASUREMENT; ELECTROLUMINESCENCE SPECTRA; GAN LAYERS; GAN LIGHT-EMITTING DIODES; MODULATION BANDWIDTH; MULTIPLE QUANTUM WELLS; P-N JUNCTION; P-TYPE GAN; WHITE LIGHT; WHITE-LIGHT GENERATION; WHITE-LIGHT LEDS;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; PHOSPHORS; SEMICONDUCTOR JUNCTIONS;

LIGHT EMITTING DIODES;

EID: 54249157676     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.916966     Document Type: Article

References (12)

1. T. Komine, J.-H Lee, S. Haruyama, and M. Nakagawa, "Adaptive equalization for indoor visible-light wireless communication systems," in Proc. 2005 Asia - Pacific Conf. Communications, Perth, Western Australia, Oct. 2005, pp. 3-5.
2. P. Vitta, P. Pobedinskas, and A. Zukauskas, "Phosphor thermometry in white light-emitting diodes," IEEE Photon. Technol. Lett., vol.19, no.6, pp. 399-401, Mar. 15, 2007.
3. S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, "Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes," Jpn. J. Appl. Phys., vol. 45, no. 4A, pp. 2463-2466, Apr. 2006.
4. C.-F. Lu, D.-M. Yeh, H.-S. Chen, C.-F. Huang, J.-J. Huang, and C. C. Yang, "Junction temperature-controlled spectrum in a two-color InGaN-GaN quantum-well light-emitting diode," IEEE Photon. Technol. Lett., vol.18, no.24, pp. 2671-2673, Dec. 15, 2006.
5. C.-F. Huang, C.-F. Lu, T.-Y. Tang, J.-J. Huang, and C.-C. Yang, "Phosphor- free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells," Appl. Phys. Lett., vol.90, p. 151122, 2007.
6. J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, "White-light emission from InGaN/GaN multi-quantum well light-emitting diodes with Si and Zn codoped active layer," IEEE Photon. Technol. Lett., vol.14, no.4, pp. 450-452, Apr. 2002.
7. J.-W. Shi, T.-J. Hung, Y.-Y. Chen, Y.-S. Wu, W. Lin, and Y.-J. Yang, "InP-based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett., vol.18, no.19, pp. 2053-2055, Oct. 1, 2006.
8. J.-W. Shi, H.-Y. Huang, C.-K. Wang, J.-K. Sheu, W.-C. Lai, Y.-S. Wu, C.-H. Chen, J.-T. Chu, H.-C. Kuo, W.-P. Lin, T.-H. Yang, and J.-I. Chyi, "Phosphor-Free GaN-based transverse junction light emitting diodes for the generation of white light," IEEE Photon. Technol. Lett., vol.18, no.24, pp. 2593-2595, Dec. 15, 2006.
9. E. F. Schubert, Light-Emitting Diodes. Cambridge: Cambridge Univ. Press, 2003, ch. 7.
10. T. Mukai, M. Yamada, and S. Nakamura, "Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes," Jpn. J. Appl. Phys., vol. 37, no. 11B, pt. 2, pp. L 1358-L 1361, Dec. 1998.
11. H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of high power blue-green light emitting diode on semipolar (11 2 2) bulk GaN substrate," Electron. Lett., vol.43, no.15, Jul. 2007.
12. F. Brillouet, E. V. K. Rao, and J. Beerens, "New low capacitance transverse junction stripe AlGaAs/GaAS laser for planar laser-MESFET integration," Electron. Lett., vol.24, pp. 97-99, Jan. 1988.