Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position

Applied Physics Letters

Volumn 84, Issue 25, 2004, Pages 5071-5073

  Haratizadeh, H ^a   Monemar, B ^a   Paskov, P P ^a   Bergman, J P ^a   Sernelius, B E ^a   Holtz, P O ^a   Iwaya, M ^b   Kamiyama, S ^b   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTROMAGNETIC WAVE POLARIZATION; GALLIUM NITRIDE; GROUND STATE; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS;

DOPANT LAYERS; EMISSION ENERGY; MULTIPLE QUANTUM WELLS (MQW); SELF-ENERGY SHIFT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3142694205     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1763976     Document Type: Article

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