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Journal of Semiconductors

Volumn 30, Issue 8, 2009, Pages

Effect of annealing on characteristics of a HfOxN y-HfO2-HfOxNy sandwich stack compared with HfO2 film

(2) Zhang, Yan a Jiang, Ran a

a SHANDONG UNIVERSITY (China)

Author keywords

Dielectrics; Diffusion; Electrical properties; Hafnium oxynitride; Permittivity

Indexed keywords

CHANNEL ELECTRONS; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; HAFNIUM OXYNITRIDE; HIGH-K GATE DIELECTRICS; STRESS-INDUCED LEAKAGE CURRENT; THERMAL STABILITY; ULSI DEVICES;

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; NITRIDES; PERMITTIVITY;

HAFNIUM COMPOUNDS;

EID: 70349189059 PISSN: 16744926 EISSN: None Source Type: Journal
DOI: 10.1088/1674-4926/30/8/082004 Document Type: Article

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.