Strain relaxation near high-k/Si interface by post-deposition annealing

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 55-60

  Emoto, T ^a   Akimoto, K ^b   Yoshida, Y ^b   Ichimiya, A ^b   Nabatame, T ^c   Toriumi, A ^c,d  

^a TOYOTA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

HfO 2; High k; Interfacial layer; Post deposition anneal; Strain

Indexed keywords

ANGLE MEASUREMENT; ANNEALING; CRYSTAL LATTICES; CURVE FITTING; HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; SILICON; STRAIN; X RAY DIFFRACTION;

HFO2; HIGH-K; INTERFACIAL LAYER; POST-DEPOSITION ANNEAL; STRAIN RELAXATION;

INTERFACES (MATERIALS);

EID: 15844392029     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.088     Document Type: Conference Paper

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