Electrical and reliability characteristics of HfO 2 gate dielectric treated in N 2 and NH 3 plasma atmosphere

Applied Surface Science

Volumn 242, Issue 3-4, 2005, Pages 313-317

  Kim, Jeon Ho ^a   Choi, Kyu Jeong ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

Electrical and reliability characteristics; HfO 2 gate dielectric; Plasma enhanced chemical vapor deposition

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CAPACITORS; CRYSTALLIZATION; CURRENT DENSITY; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELIABILITY; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURES; ELECTRICAL AND RELIABILITY CHARACTERISTICS; HFO2 GATE DIELECTRICS; PLASMA TREATMENTS;

DIELECTRIC MATERIALS;

EID: 13444311927     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.08.026     Document Type: Article

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