50 years of successful MCT research and production in France

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7298, Issue , 2009, Pages

  Bensussan, Philippe ^a   Tribolet, Philippe ^a   Destefanis, Gérard ^b   Sirieix, Michel ^c  

^a SOFRADIR   (France)

^b CEA LETI   (France)

^c SAFRAN AIRCRAFT ENGINES   (France)

Author keywords

CEA Leti; Dual Band; Focal plane arrays; FPA; HgCdTe; Infrared detectors; MCT; Sagem DS; Sofradir

Indexed keywords

CEA-LETI; DUAL BAND; FPA; HGCDTE; MCT; SAGEM DS; SOFRADIR;

CADMIUM; CADMIUM COMPOUNDS; DETECTORS; DIELECTRIC RELAXATION; FOCAL PLANE ARRAYS; FOCUSING; INFRARED DETECTORS; INFRARED RADIATION; MERCURY (METAL); MERCURY COMPOUNDS; TELLURIUM COMPOUNDS;

RESEARCH;

EID: 70049101025     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.821015     Document Type: Conference Paper

References (76)

1. H Rodot PhD thésis Paris 1965
2. M Rodot, H Rodot & C Vérié Proceeding of the 7th international conference on the physics of semiconductors p1237 (1964).
3. C Vérié PhD Thesis, Paris 1967.
4. C Vérié & J Ayas Appl.Phys Letters 10, 241 (1967).
5. C Vérié & M Sirieix IEEE J QE-8, 180-184 (1972).
6. B Peyton Phase one design report for high sensitivity HgCdTe receiver development Contract NAS 5-11665 (Sept 1969).
7. 'MBE of IIVI compounds: HgCdTe, JP Faurie, A.Million : J.cryst.growth 54 (1981).
8. « Ion Implantation in HgCdTe », G. Destefanis; Publication : Nucl.Inst.and Methods 209/210 (1983) pp.567-580.
9. « Electrical and Optical Properties of Ion Implanted HgCdTe/CdTe », G. Destefanis, R. Boch, R. Roussille; Publication : J.Cryst. Growth 59(1982) pp.270-275.
10. «Indium Ion Implantation in HgCdTe », G. Destefanis;; Publication: J. Vac. Sci. Technolo. A3(1) 1985 pp 171-175.
11. nd International Conference on II-VI Compounds Aussois (France) 1985.
12. « Electrical Doping of HgCdTe by Ion Implantation and Heat Treatment », G. Destefanis; Publication : J.Crystal Growth 86(1988) pp.700-727.
13. «Indium Ion Implantation in HgCdTe », G. Destefanis; Publication: J. Vac. Sci. Technology. A3(1) 1985 pp 171-175.
14. « Electrical and Physical Characterization of High Quality Liquid phase Epitaxy CdHgTe on CdZnTe », G. Destefanis, S. Guillot, J.L. Ouvrier-Buffet, S. Paltrier; Publication: Proceedings SPIE Vol659 (1986) pp 85-92.
15. Growth and Characterisation of LPE CdHgTe/CdZnTe/CdZnTe Structure », B. Pelliciari, J.P. Chamonal, G. Destefanis, L. Di Cioccio; Publication : Proceedings SPIE Vol865 pp.22-29.
16. ««Evidence of Anomalous Behaviour in Low n Type Mercury Cadmium Telluride », B. Pelliciari, G. Destefanis, L. Di Cioccio; Publication: J. Vac. Sci. Technol. A7(2) March-April 1988 pp. 1794-1798.
17. « Electrical Doping of HgCdTe by Ion Implantation and Heat Treatment », G. Destefanis;; Publication : J.Crystal Growth 86(1988) pp.700-727.
18. « HgCdTe Infrared Diodes Arrays », G. Destefanis; Publication: Semicond. Sci. Technol. 6 (1991) pp88-92.
19. « Large Improvement in HgCdTe Photovoltaic Detector Performance at LETI », G. Destefanis, J.P. Chamonal; Publication : Journal of Electron. Mater.vol 22 no. 8 1993 pp.1027-1032.
20. « Molecular Beam Epitaxy of HgCdTe for Infrared Focal Plane Arrays », A. Million, P. Ferret, J.P. Chamonal, G. Destefanis, P. Nicolas, P. Bouchut; International SPIE meeting (Orlando USA april 1994 ) Publication : Proceedings SPIE vol 2225.
21. « Hetero-Epitaxy of HgCdTe (221)) B on Germanium Substrates by Molecular Beam Epitaxy for Infrared Detectors », J.P. Zanatta, P. Ferret, A. Million, M. Wolny, J.P. Chatard and G. Destefanis; Publication: J. Electron. Mater. Vol 27 no. 6 -pp 542 -545 (1998).
22. « Growth of HgCdTe and CdTe (331) B on Germanium Substrates by Molecular Beam Epitaxy », J.P. Zanatta, P. Duvaut, P. Ferret, A. Million, G. Destefanis, P. Rambaud, C. Vannuffel; Publication: Appl. Physics Letters Vol71, 17 Nov. 1997 -no. 20 pp 2984-2986.
23. « Long MWIR HgCdTe Butted Linear Arrays », J.P. Chamonal, P. Audebert, G. Destefanis, P. Medina, M. Ravetto, J. Deschamps, M. Girard, J.P. Chatard; SPIE vol3061 pp. 467-475 (1997)
24. « Long Linear MWIR and LWIR HgCdTe Infrared Detection Arrays for High Resolution Imaging ) », J.P. Chamonal, P. Audebert, P. Medina, G. Destefanis, J. Deschamps, M. Girard, J.P. Chatard; : Publication: Proceedings -SPIE -Vol3553 -pp 23 -32 (1998).
25. « High performance LWIR 256 x 256 HgCdTe Focal Plane Array Operating at 88 K », G. Destefanis, P. Audebert, E. Mottin, P Rambaud; Publication: Proceeding SPIE vol3061 pp.111-116 (1997).
26. « Single and two colour infrared focal plane arrays made by MBE in HgCdTe »J.P. Zanatta, P. Ferret, R. Loyer, G. Petroz, S. Cremer, J.P. Chamonal, Ph. Bouchut, A. Million, G. Destefanis;); Publication: SPIE proceedings Vol. 4130.
27. « Status of the MBE Technology at Leti LIR for Manufacturing of CdHgTe Focal Plane Arrays» P. Ferret, J.P. Zanatta, R. Hamelin, S. Cremer, A. Million, M. Wolny and G.Destefanis; Publication : J. Electron. Mater. vol 29 n° 6 (2000) -pp 641 -647.
28. « Recent developments in infrared FPAs with multispectral 128 » J. Baylet, J.P. Zanatta, D.Chance, F.Rothan, E. De Borniol, P. Castelein, J.P. Chamonal, M. Ravetto, G. Destefanis, F. Rothan,;: proceedings SPIE vol4650.
29. « Recent advances in the development of infrared multispectral 128 FPAs » J. Baylet, J.P. Zanatta, S. Mibord, O. Gravrand, E. De Borniol, P. Castelein, J.P. Chamonal, M. Ravetto, G. Destefanis, F. Rothan,; Publication : proceedings SPIE vol4721
30. « Recent developments of high complexity HgCdTe focal plane arrays at LETI infrared laboratory » G. Destefanis, A. Bain, J. Baylet, P. Castelein, E. De Borniol, O. Gravrand, F. Marion, A. Million, Ph. Rambaud, F. Rothan, J.L. Martin, P. Martin,; J.Electron mater vol32 n°7.
31. « SOFRADIR approach for 2/5 and 3rd generations of IR detectors » P. Tribolet, P. Bensussan, G. Destefanis; Communication:The 5th International Military Sensing Symposium : 2002DTB04 -dec 2002 Wahington (USA) -Org. OTAN. Publication: to be published in the meeting proceedings.
32. « Recent developments of high complexity HgCdTe focal plane arrays at LETI infrared laboratory » G. Destefanis, A. Bain, J Baylet, P. Castelein, E. De Borniol, O. Gravrand, F. Marion, A. Million, Ph. Rambaud, F. Rothan, J.L. Martin, P. Martin,;: J.Electron mater vol32 no. 7.
33. «Third generation and multicolor IRFPA developments: a unique approach based on Defir» P. Tribolet, G. Destefanis .Publication SPIE proceedings (vol 5783).
34. «Advanced HgCdTe Technologies and Dualband Developpements » P. Tribolet, G. Destefanis, P. Ballet, J. Baylet, O. Gravrand, J. Rothman : International SPIE meeting Infrared technology and application XXXIV: (Orlando USA April 2008)Publication SPIE proceedings (vol 6940).
35. High performance infrared detectors at Sofradir, Philippe Tribolet, Philippe Chorier, Alain Manissadjian, Patricia COSTA, Jean Pierre CHATARD, SPIE Proc. Vol [4028-54], Orlando -April 2000.
36. J.D. Beck, C.-F.Wan, M.A. Kinch, J.E. Robinson, Proc. SPIE, 4454, 188 (2001); J.D. Beck, C.-F. Wan, M.A. Kinch, J.E.
37. Robinson, P. Mitra, R. Scrithfield, F. Ma, J. Campbell, J. Electron. Mater. 35, 1166 (2006).
38. « A Megapixel HgCdTe MWIR Focal plane array with a 15 μm pitch » P. Castelein, F. Marion, JL. Martin, JP. anatta, N. Moussy, O. Gravrand, A. Durand, JP. Chamonal, G. Destefanis -Publication: Proceeding SPIE (vol 5074)
39. « Study of the pixel pitch reduction for HgCdTe infrared dual band detectors » J. Baylet, E. Laffosse, C. Vergnaud, S. Ballerand, B. Aventurier, O. Gravrand, JC. Deplanche, Ph. Ballet, P. Castelein, JP. Chamonal, A. Million, G. Destefanis -: Publication: J.Electron.Mater vol33 no. 6 p690.
40. « MBE-growth of high quality HgCdTe multilayers on CdZnTe and CdTe/Ge substrates for dual-wavelength IRdetection » Ph. Ballet, F. Noël, F. Pottier, JP. Zanatta, J. Baylet, O. Gravrand, E. Deborniol, S. Martin, P. Castelein, JP. Chamonal, A. Million, G. Destefanis -J.Crystal Growth 2004.
41. « Dual band infrared detectors made on high quality HgCdTe epilayers grown by MBE on CdZnTe or CdTe/Ge substrates » Ph. Ballet, F. Noël, F. Pottier, JP. Zanatta, J. Baylet, O. Gravrand, E. Deborniol, S. Martin, P. Castelein, JP. Chamonal, A. Million, G. Destefanis -Publication J. Electron mater. Vol 33 N°6 p667.
42. « A Megapixel HgCdTe MWIR Focal plane array with a 15 um pitch » P. Castelein, F. Marion, JL. Martin, JP. Zanatta, N. Moussy, O. Gravrand, A. Durand, JP. Chamonal, G. Destefanis -:Publication : to published in SPIE proceedings (vol 5251).
43. « Microspectrophotometer on a chip (MICROSPOC): first demonstration on a 320x240 LWIR focal plane array » S. Rommeluere, N. Guerineau, J. Deschamps, E. Deborniol, A. Million, JP. Chamonal, G. Destefanis -:SPIE proceedings (vol 5406).
44. «Third generation and multicolour IRFPA developments: a unique approach based on Defir» P. Tribolet, G. Destefanis -:SPIE proceedings (vol 5783).
45. «Demonstration of a 25μ m pitch dual band HgCdTe infrared focal plane array with spatial coherence» P. Ballet, P. Castelein, J. Baylet, E. Laffosse, M. Fendler, F. Pottier, S. Gout, C. Vergnaud, S. Ballerand, O. Gravrand, JC. Desplanches, S. Martin, JP. Zanatta, JP. Chamonal, A. Million, G. Destefanis -: Publication : SPIE proceedings (vol 5978-44).
46. «Long wave HgCdTe staring arrays at Sofradir: from 9μ m to 13+μ m cut-off for high performance applications» A. Manissadjian, P. Tribolet, G. Destefanis, E. Deborniol. Publication SPIE proceedings (vol 5783).
47. «High resolution FPAs on MBE grown HgCdTe/CdTe/Ge» G. Badano, P. Ballet, JP. Zanatta, A. Million, C. Largeron, JP. Baylet, J. Rothman, O. Gravrand, P. Castelein, JP. Chamonal, G. Destefanis-SPIE proceedings (vol 5964-51).
48. «Characterization of high performances long wave and very long wave HgCdTe staring arrays» E. Deborniol, G. Destefanis, A. Manissadjian, P. Tribolet-. SPIE proceedings (vol 5978-44).
49. « TV/4 dual band HgCdTe infrared focal plane arrays with a pitch of 25μ m and spatial coherence» J. Baylet, Ph. Ballet, P. Castelein, F. Rothan, M. Fendler, E. Laffosse, JP. Zanatta, JP. Chamonal, A. Million, G. Destefanis -Publication: J.Electron.Mater. 2006 vol35, 6.
50. « From visible to infrared: a new approach » P.Chorier, P.Tribolet, G.Destefanis, -). Publication SPIE proceedings (vol 6206-01).
51. « HgCdTe large staring arrays at Sofradir » P.Tribolet, G.Destefanis -Communication: The 19th International technology conference on photoelectronis and nigh vision devices (2006) -Publication: to be published in SPIE proceedings.
52. G. Destefanis,, J. Baylet, P. Ballet, P. Castelein, F. Rothan, O. Gravrand, J. Rothman, J.P. Chamonal, A. Million, J. Electron. Mater. 36 (8), 1031 (2007).
53. « Bi-color and dual band infrared focal plane arrays at Defir » G.Destefanis, Ph. Ballet, J.Baylet, P.Castelein, O.Gravrand, J.Rothman, F.Rothan, G.Perrais, J.Chamonal, A.Million, P.Tribolet, B.Terrier, E.Sanson, P.Costa, L.Vial -. Publication SPIE proceedings (vol 6206-27).
54. « Demonstration of multifonctions bicolour avalanche gain in HgCdTe FPA » G.Perrais;J.Rothman, G.Destefanis, J.P.Baylet, P.Castelein, J.Chamonal; P.Tribolet -. Publication SPIE proceedings (vol 6395-16).
55. « From LWIR to VLWIR FPAs made with HgCdTe at Defir » O.Gravrand, E. Deborniol, G.Destefanis, A.Manissadjian, P.Tribolet, C.Pautet, P.Chorier -Publication SPIE proceedings (vol 6361-42).
56. « Status of HgCdTe bicolour and dual band infrared focal plane arrays at LETI » G.Destefanis, J.Baylet, P.Ballet, F.Rothan, O.Gravrand, J.Rothman, J.P.Chamonal, A.Million -JEM 2007.
57. « Gain and Dark current characteristics of planar HgCdTe avalanche photodiodes » G.Perrais, O. Gravrand, J.Baylet, G. Destefanis and J.Rothman-Communication: to be published J.Electron.Mater. 2007.
58. "Advanced HgCdTe technologies in France" G. Destefanis, Ph Tribolet, -Publication SPIE proceedings (vol 6542-12).
59. "Advanced HgCdTe technologies at LETI" G.L Destefanis, -Publication: to be published J.Electron.Mater. 2008.
60. Impulse time response measurement in HgCdTe MWIR avalanche photodiodes" G. Perrais, J. Rothman, G.L Destefanis, JP. Chamonal and, -Publication: J.Electron.Mater. Vol37, no. 9 2008.
61. "High performance characteristics in pin MW HgCdTe APDs" J. Rothman, G. Perrais, G. Destefanis, J. Baylet, P.Castelein, JP. Chamonal-. Publication SPIE proceedings (vol 6542-19).
62. Planar p on n FPAs by arsenic ion implantation" L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J.P. Chamonal, P. Castelein, J.P. Zanatta, M. Tchagaspanian, A.M. Papon, J.P. Barnes-Publication: to be published J.Electron.Mater. 2009.
63. "Planar p on n FPAs by arsenic ion implantation" L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J.P. Chamonal, P. Castelein, J.P. Zanatta, M. Tchagaspanian, A.M. Papon, J.P. Barnes-Publication: to be published J. Electron. Mater. 2009.
64. "Studies of HgCdTe avalanche photodiodes response time throught experimental, numerical and Monte Carlo G. Perrais, S. Derelles, L. Mollard, JP.Chamonal, G. Destefanis, J. Rothman. to be published J. Electron. Mater. 2009
65. "Fabrication and characterization of HgCdTe Large format dual band Focal plane arrays" J. Baylet, P. Ballet, O. Gravrand, J. Rothman, , N. Alti Mani, E. Sanson, F. Ponthenier, P. Le Boterf, J.Sevenier, F. Chabuel, G. Destefanis, To be published in J.Electron.Mater. 2009.
66. "HgCdTe FPAs made by arsenic ion implantation" L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J.P. Chamonal, P. Castelein, J.P. Zanatta, M. Tchagaspanian, A.M. Papon, J.P. Barnes, F. Henry, S. Gout, G.Bourgeoisl-Publication SPIE proceedings (vol 6940-OF)
67. "Advanced HgCdTe technologies and dual band developments" P. Tribolet, G. Destefanis, P. Ballet, J. Baylet, O. Gravrand, J. Rothman.. Publication SPIE proceedings (vol 6940 2P).
68. "HgCdTe APD focal plane array development at CEA Leti Minatec" J. Rothman, G. Perrais, E. Deborniol, P.Castelein, N. Baier, F.Guellec, M. Tchagaspanian, P. Ballet, L. Mollard, S. Gout, A. Perez, M. Fournier, J.P. Chamonal, P. Tribolet, G. Destefanis -Publication SPIE proceedings (vol 6940-2N).
69. "Status of p on n HgCdTe technologies at Defir" N. Baier, L. Mollard, J. Rothman, G. Destefanis Communication: to be presented International SPIE meeting Infrared technology and application XXXV: (Orlando USA April 2009). Publication SPIE proceedings.
70. "Planar p on n FPAs by arsenic ion implantation" L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J.P. Chamonal, P. Castelein, J.P. Zanatta, M. Tchagaspanian, A.M. Papon, J.P. Barnes T-Publication: to be published J.Electron.Mater. 2009.
71. "Planar p on n FPAs by arsenic ion implantation" L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J.P. Chamonal, P. Castelein, J.P. Zanatta, M. Tchagaspanian, A.M. Papon, J.P. Barnes-Publication: to be published J. Electron. Mater. 2009.
72. "Studies of HgCdTe avalanche photodiodes response time throught experimental, numerical and Monte Carlo G. Perrais, S. Derelles, L. Mollard, JP.Chamonal, G. Destefanis, J. Rothman.-Publication: to be published J. Electron. Mater. 2009.
73. "Fabrication and characterization of HgCdTe Large format dual band Focal plane arrays" J. Baylet, P. Ballet, O. Gravrand, J. Rothman, , N. Alti Mani, E. Sanson, F. Ponthenier, P. Le Boterf, J.Sevenier, F. Chabuel, G. Destefanis, -To be published in J.Electron.Mater. 2009.
74. "HgCdTe FPAs made by arsenic ion implantation" L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J.P. Chamonal, P. Castelein, J.P. Zanatta, M. Tchagaspanian, A.M. Papon, J.P. Barnes, F. Henry, S. Gout, G.Bourgeoisl-Publication SPIE proceedings (vol 6940-OF).
75. "Advanced HgCdTe technologies and dual band developments" P. Tribolet, G. Destefanis, P. Ballet, J. Baylet, O. Gravrand, J. Rothman. Publication SPIE proceedings (vol 6940 2P).
76. "HgCdTe APD focal plane array development at CEA Leti Minatec" J. Rothman, G. Perrais, E. Deborniol, P.Castelein, N. Baier, F.Guellec, M. Tchagaspanian, P. Ballet, L. Mollard, S. Gout, A. Perez, M. Fournier, J.P. Chamonal, P. Tribolet, G. Destefanis -Publication SPIE proceedings (vol 6940-2N).