Status of the MBE technology at Leti LIR for the manufacturing of HgCdTe focal plane arrays

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 641-647

  Ferret, P ^a   Zanatta, J P ^a   Hamelin, R ^a   Cremer, S ^a   Million, A ^a   Wolny, M ^a   Destefanis, G ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC POTENTIAL; INFRARED DETECTORS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH;

FOCAL PLANE ARRAYS (FPA); LONG WAVELENGTH INFRARED (LWIR) DETECTORS; MEDIUM WAVELENGTH INFRARED (MWIR) DETECTORS; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033702188     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0198-x     Document Type: Article

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