Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 667-672

  Ballet, P ^a   Noel F ^a   Pottier, F ^a   Plissard, S ^a   Zanatta, J P ^a   Baylet, J ^a   Gravrand, O ^a   De Borniol, E ^a   Martin, S ^a   Castelein, P ^a   Chamonal, J P ^a   Million, A ^a   Destefanis, G ^a  

^a CEA LETI   (France)

Author keywords

CdTe Ge substrates; CdZnTe substrates; HgCdTe; Molecular beam epitaxy (MBE)

Indexed keywords

DOPING (ADDITIVES); ELECTROOPTICAL DEVICES; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT TRANSMISSION; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DIODES; STACKING FAULTS; X RAY DIFFRACTION;

CDTE/GE SUBSTRATES; CDZNTE SUBSTRATES; DUAL-BAND DETECTORS; FOCAL PLANE ARRAYS (FPA); HGCDTE; MID-WAVELENGTH INFRARED (MWIR) BANDS;

INFRARED DETECTORS;

EID: 3042713317     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0065-2     Document Type: Conference Paper

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