High performance characteristics in pin MW HgCdTe e-APDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6542, Issue I, 2007, Pages

  Rothman, J ^a   Parais, G ^a   Destefanis, G ^a   Baylet, J ^a   Castelein, P ^a   Chamonal, J P ^a  

^a CEA LETI   (France)

Author keywords

APD; Gain; HgCdTe; MBE; Noise factor; Response time

Indexed keywords

IMPULSE RESPONSE; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; RESPONSE TIME (COMPUTER SYSTEMS);

ABSORPTION LAYER; NOISE FACTOR;

MERCURY COMPOUNDS;

EID: 35649027422     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.723465     Document Type: Conference Paper

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