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Volumn 6940, Issue , 2008, Pages
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HgCdTe FPAs made by Arsenic-ion implantation
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Author keywords
Arsenic implantation; Focal plane array; HgCdTe; p on n photodiode
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Indexed keywords
ACTIVATION ANALYSIS;
ANNEALING;
ARSENIC;
CHARGED PARTICLES;
COMPUTER NETWORKS;
CRYSTAL GROWTH;
ELECTRON MICROSCOPES;
ELECTRON MICROSCOPY;
ELECTRON OPTICS;
ELECTRONS;
EPITAXIAL GROWTH;
EPITAXIAL LAYERS;
HEALTH;
HETEROJUNCTION BIPOLAR TRANSISTORS;
IMAGING TECHNIQUES;
INFRARED RADIATION;
ION BOMBARDMENT;
ION IMPLANTATION;
LEAKAGE CURRENTS;
LIQUID PHASE EPITAXY;
MASS SPECTROMETRY;
MERCURY (METAL);
MERCURY COMPOUNDS;
MICROSCOPIC EXAMINATION;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
NONMETALS;
OPTICAL ENGINEERING;
OPTICS;
PHOTODIODES;
PLASMA DIAGNOSTICS;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR DOPING;
SENSITIVITY ANALYSIS;
SPECTRUM ANALYSIS;
SPECTRUM ANALYZERS;
STEEL ANALYSIS;
TECHNOLOGY;
TRANSIENT ANALYSIS;
TRANSMISSION ELECTRON MICROSCOPY;
(E ,3E) PROCESS;
(P ,P ,T) MEASUREMENTS;
ACTIVATION EFFICIENCY;
ARSENIC CONCENTRATIONS;
ARSENIC IMPLANTATION;
ELECTRO-OPTICAL;
ELECTRON MICROSCOPY (TEM AND SEM);
INFRARED PHOTODIODES;
INFRARED TECHNOLOGIES;
LIQUID-PHASE;
LONG WAVELENGTH (LW);
LOW LEAKAGE;
MAXIMUM ENTROPY (MAXENT);
MOBILITY SPECTRUM ANALYSIS (MSA);
MULTI-COMPONENT DIFFUSION;
N TYPE DOPING;
OVERPRESSURE (OP);
P-TYPE DOPING;
POST-IMPLANT ANNEALING;
SECONDARY ION MASS SPECTROSCOPY (SIMS);
SHUNT RESISTANCES;
STATE OF THE ARTS;
MOLECULAR BEAM EPITAXY;
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EID: 45549085770
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.780582 Document Type: Conference Paper |
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Times cited : (22)
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References (8)
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