Deep reactive ion etching as a tool for nanostructure fabrication

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1520-1526

  Fu, Y Q ^a,b   Colli, A ^c   Fasoli, A ^c   Luo, J K ^a,d   Flewitt, A J ^c   Ferrari, A C ^c   Milne, W I ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HERIOT WATT UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d Centre for Materials Research and Innovation   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; FABRICATION; NANOWIRES; TRANSPORT PROPERTIES;

DEEP REACTIVE ION ETCHING; FIELD-EMISSION PROPERTIES; HYBRID STRUCTURE; NANO-NETWORKS; NANOPILLARS; NANOSTRUCTURE FABRICATION; NANOWALLS; SI NANOPILLARS; SILICON NANOWIRES; THREE-DIMENSIONAL NANOSTRUCTURES; TOP-DOWN FABRICATION;

REACTIVE ION ETCHING;

EID: 69949177705     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3065991     Document Type: Conference Paper

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