Room temperature single electron charging in single silicon nanochains

Journal of Applied Physics

Volumn 103, Issue 5, 2008, Pages

  Rafiq, M A ^a,e,f   Durrani, Z A K ^b,e   Mizuta, H ^c,e   Colli, A ^d,g   Servati, P ^d   Ferrari, A C ^d   Milne, W I ^d,e   Oda, S ^a,e  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e SORST JST (Japan Science and Technology)

^f PAKISTAN INSTITUTE OF ENGINEERING AND APPLIED SCIENCES   (Pakistan)

^g NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB INTERACTIONS; ELECTRIC CHARGE; SILICON; TUNNEL JUNCTIONS;

SINGLE-ELECTRON CHARGING EFFECTS; SINGLE-ELECTRON CHARGING ENERGY;

NANOSTRUCTURED MATERIALS;

EID: 40849083836     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2887988     Document Type: Article

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