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Volumn 50, Issue 12, 2007, Pages 58-60

DRIE from MEMS to wafer-level packaging

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SCALE PACKAGES; DIGITAL INTEGRATED CIRCUITS; PLASMA ETCHING; REACTIVE ION ETCHING; SIZE DETERMINATION;

EID: 38049123027     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (3)

References (7)
  • 1
    • 0003950677 scopus 로고
    • Method for Anisotropically Etching Silicon,
    • German patent DE4241045
    • F. Laermer, A. Schilp, "Method for Anisotropically Etching Silicon," German patent DE4241045, 1992.
    • (1992)
    • Laermer, F.1    Schilp, A.2
  • 4
    • 10044280715 scopus 로고    scopus 로고
    • High Density and Through-wafer Copper Interconnects and Solder Bumps for MEMS Wafer-level Packaging
    • Oct
    • C-J Lin, M-T Lin, S-P Wu, F-G Tseng, "High Density and Through-wafer Copper Interconnects and Solder Bumps for MEMS Wafer-level Packaging," Jour. of Microsystem Technologies, Vol. 10, No. 6-7, Oct. 2004.
    • (2004) Jour. of Microsystem Technologies , vol.10 , Issue.6-7
    • C-J, L.1    M-T, L.S.-P.W.2    F-G, T.3
  • 5
    • 0029419192 scopus 로고
    • Advanced Silicon Etching Using High-density Plasmas
    • J.K. Bhardwaj, H. Ashraf, "Advanced Silicon Etching Using High-density Plasmas," Proc. SPIE, 2639, 224, 1995.
    • (1995) Proc. SPIE , vol.2639 , pp. 224
    • Bhardwaj, J.K.1    Ashraf, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.