Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 156-159

  Rubio, J E ^a   Marques L A ^a,b   Pelaz, L ^a   Jaraiz M ^a,c   Barbolla, J ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COMPUTER SIMULATION; MOLECULAR DYNAMICS; SILICON; SPUTTERING;

FLUENCE DEPENDENCE; SPUTTERING ENHANCEMENT;

ION BOMBARDMENT;

EID: 0030563532     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01140-4     Document Type: Article

References (13)

1. P. Blank and K. Wittmaack, J. Appl. Phys. 50 (1979) 519.
2. J. Kirschner and H.W. Etzkorn, Appl. Phys. A 29 (1982) 133.
3. P.C. Zalm, J. Appl. Phys. 54 (1983) 2660.
4. K. Wittmaack, Nucl. Instr. and Meth. B 2 (1984) 569.
5. G.N.A. van Veen, F.H.M. Sanders, J. Dieleman, A. van Veen, D.J. Oostra and A.E. de Vries, Phys. Rev. B 57 (1986) 739.
6. R.A. Stansfield, D. Broomfield and D.C. Clary, Phys. Rev. B 39 (1989) 7680.
7. R. Smith, D.E. Harrison and B.J. Garrison, Phys. Rev. B 40 (1989) 93.
8. J.E. Rubio, L.A. Marqués, M. Jaraíz, L.A. Bailón, J. Barbolla, Nucl. Instr. and Meth. B 102 (1995) 301.
9. F.H. Stillinger and T.A. Weber, Phys. Rev. B 31 (1985) 5262.
10. D.W. Heermann, Computer Simulation Methods in Theoretical Physics (Springer, Heidelberg, 1989).
11. W.M. Lau, I. Bello, L.J. Huang, X. Feng, M. Vos, I.V. Mitchell, J. Appl. Phys. 74 (1993) 7101.
12. J.P. Biersack and J.F. Ziegler, Nucl. Instr. and Meth. 194 (1982) 93.
13. H.A. Filius, A. van Veen, K-R. Bijkerk, J.H. Evans, Radiat. Eff. 108 (1989) 1.