TEM preparation by "low voltage" FIB;TEM-präparation mittels "low-voltage"-FIB

Praktische Metallographie/Practical Metallography

Volumn 43, Issue 8, 2006, Pages 396-405

  Altmann, Frank ^a   Graft, Andreas ^a   Simon, Michél ^a   Hoffmeister, Himar ^b   Gnauck, Peter ^b  

^a FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

^b CARL ZEISS SMT AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE PROCESSING; IMAGING TECHNIQUES; ION BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES;

ACCELERATION VOLTAGE; SEMICONDUCTOR TECHNOLOGY; SURFACE DAMAGES;

TRANSMISSION ELECTRON MICROSCOPY;

EID: 33747610382     PISSN: 0032678X     EISSN: None     Source Type: Journal    
DOI: 10.3139/147.100310     Document Type: Article

References (6)

1. Barna, A.: Multi-National Congress on Electron Microscopy, 5-8 Oct. 1997 Portoroz, Slovenia
2. Giannuzzi, L A.; Stevie, F. A.: Introduction to Focused Ion Beam, Springer 2005
3. Altmann, F.: Prakt. Metallogr. 4 (2005), 206-212
4. Arnold, B.; Bauer, H.-D.: Prakt. Metallogr. 40 (2003), 109-129
5. Kato, N. I.: Journal of Electron Microscopy 53(2004), 451-458
6. www.smt.zeiss.com