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Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

Effects of surface alloying and orientation on work function of MoTa metal gate

(5) Xu, Guigui a Wu, Qingyun a Chen, Zhigao a Huang, Zhigao a Feng, Yuan Ping b

a FUJIAN NORMAL UNIVERSITY (China)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST PRINCIPLES METHOD; METAL GATE; METAL WORK FUNCTION; ORIENTATION DEPENDENCE; SURFACE ALLOYING; SURFACE DIPOLE; SURFACE LAYERS; SURFACE ORIENTATION;

DENSITY FUNCTIONAL THEORY; MOLYBDENUM; MONOLAYERS; TANTALUM; WORK FUNCTION;

SURFACE ANALYSIS;

EID: 69749106131 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3204976 Document Type: Article

Times cited : (23)

References (30)

1
- 79956006409
- 2 films on silicon: Dynamic growth process and interface structure
- DOI 10.1063/1.1467970
- S. J. Wang and C. K. Ong, Appl. Phys. Lett. 0003-6951 80, 2541 (2002). 10.1063/1.1467970 (Pubitemid 34474332)
- (2002) Applied Physics Letters , vol.80 , Issue.14 , pp. 2541
- Wang, S.J.¹ Ong, C.K.²

2
- 1642330111
- 0031-9007,. 10.1103/PhysRevLett.92.057601
- P. W. Peacock and J. Robertson, Phys. Rev. Lett. 0031-9007 92, 057601 (2004). 10.1103/PhysRevLett.92.057601
- (2004) Phys. Rev. Lett. , vol.92 , pp. 057601
- Peacock, P.W.¹ Robertson, J.²

3
- 33749233440
- First-principles study of ZrO2 Si interfaces: Energetics and band offsets
- DOI 10.1103/PhysRevB.72.045327, 045327
- Y. F. Dong, Y. P. Feng, S. J. Wang, and A. C. H. Huan, Phys. Rev. B 0163-1829 72, 045327 (2005). 10.1103/PhysRevB.72.045327 (Pubitemid 41526616)
- (2005) Physical Review B - Condensed Matter and Materials Physics , vol.72 , Issue.4 , pp. 1-9
- Dong, Y.F.¹ Feng, Y.P.² Wang, S.J.³ Huan, A.C.H.⁴

4
- 33845392078
- 2
- DOI 10.1063/1.1436299
- V. V. Afanas'ev, M. Houssa, A. Stesmans, and M. M. Heyns, J. Appl. Phys. 0021-8979 91, 3079 (2002). 10.1063/1.1436299 (Pubitemid 34598779)
- (2002) Journal of Applied Physics , vol.91 , Issue.5 , pp. 3079
- Afanas'ev, V.V.¹ Houssa, M.² Stesmans, A.³ Heyns, M.M.⁴

5
- 17644420336
- Impact of interface structure on Schottky-barrier height for NiZr O2 (001) interfaces
- DOI 10.1063/1.1891285, 132103
- Y. F. Dong, S. J. Wang, J. W. Chai, Y. P. Feng, and A. C. H. Huan, Appl. Phys. Lett. 0003-6951 86, 132103 (2005). 10.1063/1.1891285 (Pubitemid 40564902)
- (2005) Applied Physics Letters , vol.86 , Issue.13 , pp. 1-3
- Dong, Y.F.¹ Wang, S.J.² Chai, J.W.³ Feng, Y.P.⁴ Huan, A.C.H.⁵

6
- 17144382061
- Ab initio study of metal gate electrode work function
- DOI 10.1063/1.1865349, 073118
- S. Park, L. Colombo, Y. Nishi, and K. Cho, Appl. Phys. Lett. 0003-6951 86, 073118 (2005). 10.1063/1.1865349 (Pubitemid 40509467)
- (2005) Applied Physics Letters , vol.86 , Issue.7 , pp. 1-3
- Park, S.¹ Colombo, L.² Nishi, Y.³ Cho, K.⁴

7
- 37149015418
- Effects of strain and interface on work function of a Nb-W metal gate system
- DOI 10.1063/1.2821225
- H. R. Gong, Y. Nishi, and K. Cho, Appl. Phys. Lett. 0003-6951 91, 242105 (2007). 10.1063/1.2821225 (Pubitemid 350262006)
- (2007) Applied Physics Letters , vol.91 , Issue.24 , pp. 242105
- Gong, H.R.¹ Nishi, Y.² Cho, K.³

8
- 33645673937
- 0013-4651,. 10.1149/1.2180710
- B. Chen, N. Biswas, and V. Misra, J. Electrochem. Soc. 0013-4651 153, G417 (2006). 10.1149/1.2180710
- (2006) J. Electrochem. Soc. , vol.153 , pp. 417
- Chen, B.¹ Biswas, N.² Misra, V.³

9
- 33845380543
- Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
- DOI 10.1063/1.2402943
- H. P. Yu, K. L. Pey, W. K. Choi, D. A. Antoniadis, E. A. Fitzgerald, D. Z. Chi, and C. H. Tung, Appl. Phys. Lett. 0003-6951 89, 233520 (2006). 10.1063/1.2402943 (Pubitemid 44907325)
- (2006) Applied Physics Letters , vol.89 , Issue.23 , pp. 233520
- Yu, H.P.¹ Pey, K.L.² Choi, W.K.³ Antoniadis, D.A.⁴ Fitzgerald, E.A.⁵ Chi, D.Z.⁶ Tung, C.H.⁷

10
- 32944474528
- ymetal gates
- DOI 10.1063/1.2174836
- H. N. Alshareef, K. Choi, H. C. Wen, H. Luan, H. Harris, Y. Senzaki, P. Majhi, B. H. Lee, R. Jammy, S. Aguirre-Tostado, B. E. Gnade, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 88, 072108 (2006). 10.1063/1.2174836 (Pubitemid 43261820)
- (2006) Applied Physics Letters , vol.88 , Issue.7 , pp. 072108
- Alshareef, H.N.¹ Choi, K.² Wen, H.C.³ Luan, H.⁴ Harris, H.⁵ Senzaki, Y.⁶ Majhi, P.⁷ Lee, B.H.⁸ Jammy, R.⁹ Aguirre-Tostado, S.¹⁰ Gnade, B.E.¹¹ Wallace, R.M.¹²

11
- 24144439320
- Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors
- DOI 10.1063/1.1947901, 073506
- C. Ren, D. S. H. Chan, X. P. Wang, B. B. Faizhal, M. -F. Li, Y. -C. Yeo, A. D. Trigg, A. Agarwal, N. Balasubramanian, J. S. Pan, P. C. Lim, A. C. H. Huan, and D. -L. Kwong, Appl. Phys. Lett. 0003-6951 87, 073506 (2005). 10.1063/1.1947901 (Pubitemid 41230680)
- (2005) Applied Physics Letters , vol.87 , Issue.7 , pp. 1-3
- Ren, C.¹ Chan, D.S.H.² Wang, X.P.³ Faizhal, B.B.⁴ Li, M.-F.⁵ Yeo, Y.-C.⁶ Trigg, A.D.⁷ Agarwal, A.⁸ Balasubramanian, N.⁹ Pan, J.S.¹⁰ Lim, P.C.¹¹ Huan, A.C.H.¹² Kwong, D.-L.¹³

12
- 0035948001
- 0003-6951,. 10.1063/1.1380240
- V. Misra, G. P. Heuss, and H. Zhong, Appl. Phys. Lett. 0003-6951 78, 4166 (2001). 10.1063/1.1380240
- (2001) Appl. Phys. Lett. , vol.78 , pp. 4166
- Misra, V.¹ Heuss, G.P.² Zhong, H.³

13
- 23244444119
- xSi metal gate electrode for p-MOSFETs
- DOI 10.1149/1.1925068
- R. T. P. Lee, S. L. Liew, W. D. Wang, E. K. C. Chua, S. Y. Chow, M. Y. Lai, and D. Z. Chi, Electrochem. Solid-State Lett. 1099-0062 8, G156 (2005). 10.1149/1.1925068 (Pubitemid 41092244)
- (2005) Electrochemical and Solid-State Letters , vol.8 , Issue.7
- Lee, R.T.P.¹ Liew, S.L.² Wang, W.D.³ Chua, E.K.C.⁴ Chow, S.Y.⁵ Lai, M.Y.⁶ Chi, D.Z.⁷

14
- 0036610805
- Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS
- DOI 10.1109/LED.2002.1004233, PII S0741310602053454
- V. Misra, H. Zhong, and H. Lazar, IEEE Electron Device Lett. 0741-3106 23, 354 (2002). 10.1109/LED.2002.1004233 (Pubitemid 34731968)
- (2002) IEEE Electron Device Letters , vol.23 , Issue.6 , pp. 354-356
- Misra, V.¹ Zhong, H.² Lazar, H.³

15
- 18344413125
- Work function of binary alloys
- DOI 10.1016/S0169-4332(00)00807-2
- R. Ishii, K. Matsumura, A. Sakai, and T. Sakata, Appl. Surf. Sci. 0169-4332 169-170, 658 (2001). 10.1016/S0169-4332(00)00807-2 (Pubitemid 32195658)
- (2001) Applied Surface Science , vol.169-170 , pp. 658-661
- Ishii, R.¹ Matsumura, K.² Sakai, A.³ Sakata, T.⁴

16
- 0037938629
- 0741-3106,. 10.1109/LED.2003.809528
- B. -Y. Tsui and C. -F. Huang, IEEE Electron Device Lett. 0741-3106 24, 153 (2003). 10.1109/LED.2003.809528
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 153
- Tsui, B.-Y.¹ Huang, C.-F.²

17
- 15744376839
- 0163-1829,. 10.1103/PhysRevB.68.195408
- T. C. Leung, C. L. Kao, W. S. Su, Y. J. Feng, and C. T. Chan, Phys. Rev. B 0163-1829 68, 195408 (2003). 10.1103/PhysRevB.68.195408
- (2003) Phys. Rev. B , vol.68 , pp. 195408
- Leung, T.C.¹ Kao, C.L.² Su, W.S.³ Feng, Y.J.⁴ Chan, C.T.⁵

18
- 0014745997
- 0036-9748,. 10.1016/0036-9748(70)90195-X
- R. Predmore and R. J. Arsenault, Scr. Metall. 0036-9748 4, 213 (1970). 10.1016/0036-9748(70)90195-X
- (1970) Scr. Metall. , vol.4 , pp. 213
- Predmore, R.¹ Arsenault, R.J.²

19
- 11944256577
- 0034-6861,. 10.1103/RevModPhys.64.1045
- M. C. Payne, M. P. Teter, D. C. Allan, T. A. Arias, and J. D. Joannopoulos, Rev. Mod. Phys. 0034-6861 64, 1045 (1992). 10.1103/RevModPhys.64. 1045
- (1992) Rev. Mod. Phys. , vol.64 , pp. 1045
- Payne, M.C.¹ Teter, M.P.² Allan, D.C.³ Arias, T.A.⁴ Joannopoulos, J.D.⁵

20
- 0030190741
- Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
- DOI 10.1016/0927-0256(96)00008-0, PII S0927025696000080
- G. Kresse and J. Furthmuller, Comput. Mater. Sci. 0927-0256 6, 15 (1996). 10.1016/0927-0256(96)00008-0 (Pubitemid 126412269)
- (1996) Computational Materials Science , vol.6 , Issue.1 , pp. 15-50
- Kresse, G.¹ Furthmuller, J.²

21
- 26144450583
- 0163-1829,. 10.1103/PhysRevB.23.5048
- J. Perdew and A. Zunger, Phys. Rev. B 0163-1829 23, 5048 (1981). 10.1103/PhysRevB.23.5048
- (1981) Phys. Rev. B , vol.23 , pp. 5048
- Perdew, J.¹ Zunger, A.²

22
- 0011236321
- 0163-1829,. 10.1103/PhysRevB.59.1758
- G. Kresse and J. Joubert, Phys. Rev. B 0163-1829 59, 1758 (1999). 10.1103/PhysRevB.59.1758
- (1999) Phys. Rev. B , vol.59 , pp. 1758
- Kresse, G.¹ Joubert, J.²

23
- 17944376877
- (Cambridge University Press, New York).
- W. H. Press, B. P. Flannery, S. A. Teukolsky, and W. T. Vetterling, New Numerical Recipes (Cambridge University Press, New York, 1986).
- (1986) New Numerical Recipes
- Press, W.H.¹ Flannery, B.P.² Teukolsky, S.A.³ Vetterling, W.T.⁴

24
- 52949083587
- 0163-1829,. 10.1103/PhysRevB.78.115420
- G. G. Xu, Q. Y. Wu, Z. G. Chen, Z. G. Huang, R. Q. Wu, and Y. P. Feng, Phys. Rev. B 0163-1829 78, 115420 (2008). 10.1103/PhysRevB.78.115420
- (2008) Phys. Rev. B , vol.78 , pp. 115420
- Xu, G.G.¹ Wu, Q.Y.² Chen, Z.G.³ Huang, Z.G.⁴ Wu, R.Q.⁵ Feng, Y.P.⁶

25
- 0001045448
- 0031-9007,. 10.1103/PhysRevLett.84.1499
- S. Ismail-Beigi and T. A. Arias, Phys. Rev. Lett. 0031-9007 84, 1499 (2000). 10.1103/PhysRevLett.84.1499
- (2000) Phys. Rev. Lett. , vol.84 , pp. 1499
- Ismail-Beigi, S.¹ Arias, T.A.²

26
- 33846045114
- First-principles study of the work function of nitrogen doped molybdenum (110) surface
- DOI 10.1063/1.2400506
- A. M. Black-Schaffer and K. Cho, J. Appl. Phys. 0021-8979 100, 124902 (2006). 10.1063/1.2400506 (Pubitemid 46058230)
- (2006) Journal of Applied Physics , vol.100 , Issue.12 , pp. 124902
- Black-Schaffer, A.M.¹ Cho, K.²

27
- 30244450536
- 0163-1829,. 10.1103/PhysRevB.46.7157
- H. L. Skriver and N. M. Rosengaard, Phys. Rev. B 0163-1829 46, 7157 (1992). 10.1103/PhysRevB.46.7157
- (1992) Phys. Rev. B , vol.46 , pp. 7157
- Skriver, H.L.¹ Rosengaard, N.M.²

28
- 0346215785
- 0039-6028,. 10.1016/j.susc.2003.11.040
- T. Radon, P. Hadzel, M. J. G. Lee, Z. A. Ibrahim, and J. C. L. Chow, Surf. Sci. 0039-6028 549, 103 (2004). 10.1016/j.susc.2003.11.040
- (2004) Surf. Sci. , vol.549 , pp. 103
- Radon, T.¹ Hadzel, P.² Lee, M.J.G.³ Ibrahim, Z.A.⁴ Chow, J.C.L.⁵

29
- 33644964727
- 0163-1829,. 10.1103/PhysRevB.72.075433
- S. F. Huang, R. S. Chang, T. C. Leung, and C. T. Chan, Phys. Rev. B 0163-1829 72, 075433 (2005). 10.1103/PhysRevB.72.075433
- (2005) Phys. Rev. B , vol.72 , pp. 075433
- Huang, S.F.¹ Chang, R.S.² Leung, T.C.³ Chan, C.T.⁴

30
- 34548459803
- Electronic structure and work function of metal gate Mo-W system
- DOI 10.1063/1.2776851
- H. R. Gong and K. Cho, Appl. Phys. Lett. 0003-6951 91, 092106 (2007). 10.1063/1.2776851 (Pubitemid 47352291)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 092106
- Gong, H.R.¹ Cho, K.²

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