Formation and characterization of perpendicular mode Si ripples by glancing angle O2+ sputtering at room temperature

Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

  Mollick, S A ^a   Ghose, D ^a  

^a SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; FLUENCES; GLANCING ANGLE; GRAZING INCIDENCE; INCIDENT ANGLES; ION BEAM POLISHING; ION-BEAM SPUTTERING; LOW ENERGY ION BEAM SPUTTERING; MORPHOLOGICAL INSTABILITY; MORPHOLOGICAL STRUCTURES; NANOMETER LENGTH SCALE; PRISTINE SURFACES; RIPPLE FORMATION; RIPPLE PATTERNS; RIPPLE STRUCTURE; ROOM TEMPERATURE; SI SURFACES; SOLID SURFACE; SPONTANEOUS FORMATION; SURFACE NORMALS; TOPOLOGICAL DEFECT; WAVE VECTOR;

BEAM PLASMA INTERACTIONS; ION BEAMS; ION BOMBARDMENT; IONS; SILICON; SPUTTERING; SURFACE ROUGHNESS;

SURFACE MORPHOLOGY;

EID: 69749085950     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3204664     Document Type: Article

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