Oxygen-ion-induced ripple formation on silicon: Evidence for phase separation and tentative model

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 35-38

  Homma, Y ^a   Takano, A ^b   Higashi, Y ^c  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

^c NTT CORPORATION   (Japan)

Author keywords

Instability; Oxygen ion bombardment; Ripple topography; Silicon

Indexed keywords

EROSION; PHASE SEPARATION; SILICA; SILICON;

RIPPLE TOPOGRAPHY;

ION BOMBARDMENT;

EID: 12244304140     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00645-1     Document Type: Conference Paper

References (12)

1. Stevie F.A., Kahora P.M., Simons D.S., Chi P. J. Vac. Sci. Technol. A. 6:1988;76.
2. Wittmaack K. J. Vac. Sci. Technol. A. 16:1998;2776.
3. Sigmund P. J. Mater. Sci. 8:1973;1545.
4. Y. Saito, Statistical Physics of Crystal Growth, World Scientific, Singapore, 1996.
5. Cuerno R., Barabási A.-L. Phys. Rev. Lett. 74:1995;4746.
6. Elst K., Vandervorst W., Alay J., Snauwaert J., Hellemans L. J. Vac. Sci. Technol. B. 11:1993;1968.
7. Jiang Z.X., Alkemade P.F. Appl. Phys. Lett. 73:1998;315.
8. K. Karen, K. Okuno, F. Soeda, A. Ishitani, in: A. Benninghoven, C.A. Evans, K.D. McKeegan, H.A. Stoms, H.W. Werner (Ed.), Proceedings of SIMS VII, Wiley, Chichester, 1990, p. 139.
9. Vajo J.J., Doty R.E., Cirlin E.-H. J. Vac. Sci. Technol. A. 14:1996;2709.
10. Wittmaack K. J. Vac. Sci. Technol. A. 8:1990;2246.
11. Wittmaack K. Surf. Sci. 419:1999;249.
12. Homma Y., Maruo T. Surf. Interface Anal. 14:1989;725.