Minimization of topological defects in ion-induced ripple patterns on silicon

New Journal of Physics

Volumn 10, Issue , 2008, Pages

  Keller, Adrian ^a   Facsko, Stefan ^a   Möller, Wolfhard ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEFECT DENSITY; IMAGING TECHNIQUES; IONS; MICROSCOPIC EXAMINATION; NONMETALS; SCANNING PROBE MICROSCOPY; SILICON; SPUTTERING; TOPOLOGY;

ATOMIC FORCE (AF); EVOLUTION (CO); FLUENCES; ION FLUENCE; ION SPUTTERING; KURAMOTO SIVASHINSKY EQUATION (KSE); LOW ENERGIES; NANO SCALING; PATTERN DEFECTS; RIPPLE PATTERNS; SELF-ORGANIZED; TOPOLOGICAL DEFECTS;

DEFECTS;

EID: 47149099224     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/10/6/063004     Document Type: Article

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