Nanoscale periodic and faceted structures formation on Si(1 0 0) by oblique angle oxygen ion sputtering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 230, Issue 1-4, 2005, Pages 539-544

  Karmakar, P ^a   Ghose, D ^a  

^a SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

Author keywords

Atomic force microscopy; Faceting; Oxygen ion sputtering; Ripple topography; Scaling exponents; Silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION BEAMS; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; SURFACE TOPOGRAPHY;

FACETING; OXYGEN-ION SPUTTERING; RIPPLE TOPOGRAPHY; SCALING EXPONENTS;

SILICON;

EID: 14744288904     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.12.097     Document Type: Conference Paper

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