Effect of surface preparation on Ni ohmic contact to 3C-SiC

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2273-2279

  Noh, Jae Il ^a   Nahm, Kee Suk ^a   Kim, Kwang Chul ^b   Capano, Michael A ^b  

^a Chonbuk National University   (South Korea)

^b Purdue University   (United States)

Author keywords

3C SiC; Chemical mechanical polishing (CMP); Chemical treatment; Contact resistance; Ni ohmic contact; Surface roughness and damage

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; FILM GROWTH; NICKEL; OXIDATION; SILICON CARBIDE; SURFACE ROUGHNESS;

SURFACE PREPARATION;

OHMIC CONTACTS;

EID: 0036890149     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00233-2     Document Type: Article

References (28)

1. Weiss B.L. Properties of silicon carbide. INSPEC. 1995.
2. Davis R.F., Kelner G., Shur M., Palmour J.W., Edmond J.A. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide. Proc. IEEE. 79:1991;677.
3. Mellock M.R., Cooper J.A. Jr. Fundamentals of SiC device processing. MRS Bull. 22:1997;42.
4. Porter L.M., Davis R.F. A critical review of ohmic and rectifying contacts for silicon carbide. Mater. Sci. Eng. B. 34:1995;83.
5. Jacob C., Pirouz P., Kuo H.-I., Mehregany M. High temperature ohmic contacts to 3C-silicon carbide films. Soild State Electron. 42(12):1998;2329.
6. Zhou L., Audurier V., Pirouz P., Powell J.A. Chemomechanical polishing of silicon carbide. J. Electrochem. Soc. 144:1997;L161.
7. Saddow S.E., Schattner T.E., Brown J., Grazulis L., Mahalingham K., Landis G.et al. Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers. J. Electron. Mater. 30:2001;228.
8. Everson W.J., Snyder D.W., Heydemann V.D. Polishing and surface characterization of SiC substrates. Mater. Sci. Forum. 338-342:2000;837.
9. Xie Z.Y., Wei C.H., Li L.Y., Yu Q.M., Edgar J.H. Gaseous etching of 6H-SiC at relatively low temperatures. J. Cryst. Growth. 217:2000;115.
10. Hallin C., Qwman F., Martensson P., Ellison A., Konstantinov A., Kordina O.et al. In situ substrate preparation for high-quality SiC chemical vapour deposition. J. Cryst. Growth. 181:1997;241.
11. Nakamura S., Kimoto T., Matsunami H., Tanaka S., Teraguchi N., Suzuki A. Formation of periodic steps with a unit-cell height on 6H-SiC(0001) surface by HCl etching Appl. Phys. Lett. 76:2000;3412.
12. Ishida Y., Takahashi T., Okumura H., Sekigawa T., Yoshida S. Schottky barrier characteristics of 3C-SiC epilayers grown by low pressure chemical vapor deposition. Mater. Sci. Forum. 338-342:2000;1235.
13. Morrison J., Pidduck A.J., Moore V., Wilding P.J., Keith H., Uren M.J.et al. Effect of plasma etching and sacrificial oxidation on 4H-SiC Schottky barrier diodes. Mater. Sci. Forum. 338-342:2000;1199.
14. 2. J. Korean Phys. Soc. 32(4):1998;588.
15. Nishino S., Suhara H., Ono H., Matsunami H. Epitaxial growth and electric characteristics of cubic SiC on silicon. J. Appl. Phys. 61(10):1987;4889.
16. 4. IEEE Trans. Electron. Dev. 39(1):1992;64.
17. Yuan C., Steckl A.J., Chaudhuri J., Thokala R., Loboda M.J. Reduced temperature growth of crystalline 3C-SiC films on 6H-SiC by chemical vapor deposition from silacyclobutane. J. Appl. Phys. 78(2):1995;1271.
18. Olego D., Cardona M. Pressure dependence of the optical phonons and transverse effective charge in 3C-SiC. Phys. Rev. B. 25:1982;3878.
19. Bullot J., Schmidt M.P. Physics of amorphous silicon-carbon alloys. Phys. Status Solidi B. 143:1987;45.
20. Zorba T., Siapkas D.I., Katsidis C.C. Optical characterization of thin and ultrathin surface and buried cubic SiC layers using FTIR spectroscopy. Microelectron. Eng. 28:1995;229.
21. Mukaida H., Okumura H., Lee J.H., Daimon H., Sakuma E., Endo K.et al. Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si. J. Appl. Phys. 62(1):1987;254.
22. 2. J. Appl. Phys. 45:1974;1075.
23. Chen J., Steckl A.J., Loboda M.J. Heteroepitaxial growth of SiC on Si by gas source MBE with silacyclobutane. Mater. Sci. Form. 264-268:1998;239.
24. Kim K.C., Park C.I., Roh J.I., Nahm K.S., Seo Y.H. The formation mechanism of interfacial voids in the growth of SiC films on Si substrates. J. Vac. Sci. Technol. A. 19(5):2001;2636.
25. Lundberg N., Östling M. Thermally stable low ohmic contacts to p-type 6H-SiC using cobalt silicides. Solid-State Electron. 39(11):1996;1559.
26. Sanchez E.K., Ha S., Grim J., Skowronski M., Vetter W.M., Dudley M.et al. Assessment of polishing-related surface damage in silicon carbide. J. Electrochem. Soc. 149:2002;G131.
27. Lee H.-.J., Seo Y.H., Oh D.-.H., Nahm K.S., Hahn Y.B., Jean I.C.et al. Light-emission phenomena from porous silicon: Siloxene compounds and quantum size effect. J. Appl. Phys. 75(12):1994;8060.
28. Pidduck A.J., Uren M.J. Surface morphology improvement of SiC epitaxy by sacrificial oxidation. Anthony C.J. Mater. Sci. Forum, vol. 264-367. 1998;367.