Thermal limitations of InP HBTs in 80- and 160-Gb ICs

IEEE Transactions on Electron Devices

Volumn 51, Issue 4, 2004, Pages 529-534

  Harrison, Ian ^a,b   Dahlstrom, Mattias ^a   Krishnan, Sundararajan ^a   Griffith, Zach ^a   Kim, Y M ^a   Rodwell, Mark J W ^a  

^a University of California   (United States)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Heterojunction bipolar transistor (HBTs); Indium phosphide (InP); Thermal modeling

Indexed keywords

BASE EMITTER JUNCTION TEMPERATURE; THERMAL LIMITATIONS;

BANDWIDTH; COMPUTER SIMULATION; ETCHING; FINITE ELEMENT METHOD; HEAT RESISTANCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1942487874     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.824686     Document Type: Article

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