High yield transferred substrate InP DHBT

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 407-408

  Kraemer, T ^a   Lenk, F ^a   Maassdorf, A ^a   Wuerfl, H J ^a   Traenkle, G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; SUBSTRATES;

HOMOGENEOUS DEVICE CHARACTERISTICS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34748899459     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381210     Document Type: Conference Paper

References (4)

1. H. Jaeckel, U. Hammer, J. Ruiz, I. Schnyder, V. Schwarz, M. Gaspar, D. Huber, M. Rohner and A. Huber, "High Speed InP-based HBTs and OEIGs", Int. Electron Devices Meeting Dig., 2002, pp. 83-86.
2. I. Harrison, M. Dahlstroem, S. Krishnan, Z. Griffith, V.M. Kim, M.J.W. Rodwell, "Thermal Limitations of InP HBTs in 80- and 160-Gb ICs", IEEE Trans. Eletron Devices, vol. 51, no. 4, pp. 529-534, Apr. 2004.
3. M.J.W. Rodwell, et al., "Submicron scaling of HBTs", IEEE Trans. Eletron Devices, vol. 48, no. 11, Nov. 2001, pp. 2606-2624.
4. I. Schnyder, M. Rohner, E. Gini, D. Huber, C. Bergamaschi, H. Jaeckel, "A Laterally Etched Collector InP/InGaAs(P) DHBT Process for High Speed Power Applications", IPRM Proc., 2000, pp. 477-480.