InP DHBT technology for 100 Gbit/s applications

2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Volumn , Issue , 2008, Pages

  Driad, R ^a   Makon, R E ^a   Benkhelifa, F ^a   Losch R ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Heterojunction bipolar transistors (HBTS); Indium phosphide; Mixed signal integrated circuits

Indexed keywords

DEMULTIPLEXERS; EMITTER AREA; HETEROJUNCTION BIPOLAR TRANSISTOR (HBTS); HIGH OUTPUT POWER; LARGE TUNING RANGE; MEDIUM-SCALE; MIXED SIGNAL; MIXED SIGNAL INTEGRATED CIRCUITS;

CIRCUIT OSCILLATIONS; CUTOFF FREQUENCY; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; VARIABLE FREQUENCY OSCILLATORS;

TECHNOLOGY;

EID: 84887489175     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. T. Suzuki et al., "Over 40-Gbit/s InP HEMT ICs for optical communication systems", IEICE Trans. Electron., Vol. E86-C (10) pp. 1916-1922, 2003
2. max", IEEE Electron Device Letters, 26 (1), pp. 11-13, 2005
3. K. Sano et al., "Up to 80-Gbit/s operations of 1:4 demultiplexer IC with InP HBTs", IEEE Compound Semiconductor Integrated Circuit Symposium, Palm Springs, CA, USA, 30 Oct.-2 Nov. 2005
4. K. Schneider et al., "Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation", IEEE Trans. on Microwave Theory and Techniques, 53 (11), pp. 3378-87, 2005
5. R.E. Makon et al., "Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs", Electron. Lett. 41 (11), pp. 644-646 (2005)
6. R. Aidam et al., "Multiwafer Solid Source Phosphorus MBE on InP for DHBTs and Aluminum Free Lasers", 16th Int. Conf. on InP and Related Materials, pp. 342-345 (2004)
7. max over 300 GHz in a new manufacturable technology", IEEE Electron Device Letter, Vol. 25 (8), pp. 520-522, 2004
8. max", International Electron Devices Meeting, pp. 553-556, 2004
9. R. Driad et al., IEICE Trans. Electron. Vol. E89-C no. 7, pp. 931-936, July 2006.
10. J. Cowles et al., "A comparison of low frequency-noise in GaAs and InP-based HBTs and VCOs", in Microwave Symp. Dig., pp. 689-692, 1995
11. Y. Bayens et al., "InP D-HBT ICs for 40 Gbit/s and higher bitrate lightwave transceivers", IEEE J. Solid State Circuits, 37(9), pp. 1152-1159, 2002
12. R. E. Makon et al., "Fundamental low phase noise InP-based DHBT VCOs with high output power operating up to 75 GHz", Compound Semiconductor IC Symposium, pp. 159-162, 2004.