Fluctuation limits & scaling opportunities for CMOS SRAM cells

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 659-662

  Bhavnagarwala, Azeez ^a   Kosonocky, Stephen ^a   Radens, Carl ^b   Stawiasz, Kevin ^a   Mann, Randy ^b   Qiuyi, Ye ^b   Ken, Chin ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL STORAGE; CELL TERMINAL VOLTAGES; VOLTAGE DEPENDENCIES;

CMOS INTEGRATED CIRCUITS; PROBABILITY DISTRIBUTIONS; TRANSISTORS; VOLTAGE CONTROL;

STATIC RANDOM ACCESS STORAGE;

EID: 33847721007     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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