Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Sang, L W ^a   Qin, Z X ^a   Fang, H ^a   Dai, T ^a   Yang, Z J ^a   Shen, B ^a   Zhang, G Y ^a   Zhang, X P ^a   Xu, J ^a   Yu, D P ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; BUFFER LAYERS; CORUNDUM; CRYSTAL GROWTH; EPILAYERS; EPITAXIAL FILMS; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SUPERCONDUCTING MATERIALS;

ALN BUFFER; DISLOCATION LINE ENERGY; EPILAYERS GROWN; EPITAXIAL ALN; EPITAXIAL BUFFER LAYERS; LATERAL GROWTH RATE; SAPPHIRE SUBSTRATES; STRAIN VARIATION; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; TRANSMISSION ELECTRON;

ATOMIC LAYER EPITAXY;

EID: 52949110949     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2990048     Document Type: Article

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