Defect and stress characterization of AlN films by Raman spectroscopy

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Lughi, Vanni ^a   Clarke, David R ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; OXYGEN CONCENTRATION; PIEZOSPECTROSCOPIC COEFFICIENTS;

ALUMINUM NITRIDE; CORRELATION METHODS; CRYSTAL DEFECTS; PHONONS; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; STRESS ANALYSIS;

THIN FILMS;

EID: 33845747279     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2404938     Document Type: Article

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