In situ scanning electron microscope electrical characterization of GaN nanowire nanodiodes using tungsten and tungsten/gallium nanoprobes

Solid State Communications

Volumn 149, Issue 39-40, 2009, Pages 1608-1610

  Lin, Yong ^a   Li, Qiming ^a   Armstrong, Andrew ^a   Wang, George T ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A. Nanostructures; A. Semiconductors; C. Scanning and transmission electron microscopy; D. Electronic transport

Indexed keywords

A. NANOSTRUCTURES; A. SEMICONDUCTORS; C. SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; CARRIER DENSITY; CONTACT AREAS; D. ELECTRONIC TRANSPORT; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; GAN NANOWIRES; IDEAL DIODES; IN-SITU; IV CHARACTERISTICS; MEASURED CURRENTS; NANODIODES; SCANNING ELECTRON MICROSCOPES; SCHOTTKY; SCHOTTKY CONTACTS; SEM;

ELECTRIC POTENTIAL; ELECTRIC WIRE; ELECTRON BEAMS; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT TRANSMISSION; NANOPROBES; NANOWIRES; OHMIC CONTACTS; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; TUNGSTEN;

ELECTRON MICROSCOPES;

EID: 68949192973     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.06.035     Document Type: Article

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