메뉴 건너뛰기




Volumn 24, Issue 8, 2009, Pages

Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SIZES; DRIVING CURRENT; GUIDED LIGHT; LIGHT OUTPUT POWER; LIGHT RADIATION; NARROWER BEAM; OUTPUT POWER; THIN-FILMS; VERTICAL DIRECTION;

EID: 68949143046     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/8/085008     Document Type: Article
Times cited : (33)

References (17)
  • 3
    • 0033309549 scopus 로고    scopus 로고
    • Characteristic of InGaN-based UV/blue/green/amber/red light emitting diode
    • Mukai T, Yamada M and Nakamura S 1999 Characteristic of InGaN-based UV/blue/green/amber/red light emitting diode Japan. J. Appl. Phys. 1 38 3976
    • (1999) Japan. J. Appl. Phys. , vol.38 , pp. 3976
    • Mukai, T.1    Yamada, M.2    Nakamura, S.3
  • 7
    • 1542315187 scopus 로고    scopus 로고
    • Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
    • Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P and Nakamura S 2004 Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening Appl. Phys. Lett. 84 855
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 855
    • Fujii, T.1    Gao, Y.2    Sharma, R.3    Hu, E.L.4    Denbaars, S.P.5    Nakamura, S.6
  • 8
    • 23444439608 scopus 로고    scopus 로고
    • Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
    • Huang H W, Chu J T, Kao C C, Hsueh T H, Yu C C, Kuo H C and Wang S C 2005 Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface Nanotechnology 16 1844
    • (2005) Nanotechnology , vol.16 , pp. 1844
    • Huang, H.W.1    Chu, J.T.2    Kao, C.C.3    Hsueh, T.H.4    Yu, C.C.5    Kuo, H.C.6    Wang, S.C.7
  • 10
    • 4644220122 scopus 로고    scopus 로고
    • Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma
    • Huang H W, Kao C C, Hsueh T H, Yu C C, Lin C F, Chu J T, Kuo H C and Wang S C 2004 Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma Mater. Sci. Eng. B 113 125
    • (2004) Mater. Sci. Eng. , vol.113 , pp. 125
    • Huang, H.W.1    Kao, C.C.2    Hsueh, T.H.3    Yu, C.C.4    Lin, C.F.5    Chu, J.T.6    Kuo, H.C.7    Wang, S.C.8
  • 11
    • 3042835508 scopus 로고    scopus 로고
    • High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
    • Kim H M, Cho Y H, Lee H S, Kim S I, Ryu S R, Kim D Y, Kang T W and Chung K S 2004 High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays Nano Lett. 4 1059
    • (2004) Nano Lett. , vol.4 , pp. 1059
    • Kim, H.M.1    Cho, Y.H.2    Lee, H.S.3    Kim, S.I.4    Ryu, S.R.5    Kim, D.Y.6    Kang, T.W.7    Chung, K.S.8
  • 17
    • 34248664068 scopus 로고    scopus 로고
    • Photonic quasi-crystal LEDs: Design, modeling, and optimization
    • Charlton M D B, Zoorob M E and Lee T 2007 Photonic quasi-crystal LEDs: design, modeling, and optimization Proc. SPIE 6486 64860R-1
    • (2007) Proc. SPIE , vol.6486
    • Charlton, M.D.B.1    Zoorob, M.E.2    Lee, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.