Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching

Materials Science and Engineering: B

Volumn 151, Issue 3, 2008, Pages 205-209

  Huang, H W ^a,b   Lin, C H ^b   Yu, C C ^b   Lee, K Y ^b   Lee, B D ^b   Kuo, H C ^a   Kuo, S Y ^c   Leung, K M ^d   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Luxtaltek Corporation   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

^d POLYTECHNIC UNIVERSITY   (United States)

Author keywords

Inductively coupled plasma (ICP); Light emitting diode (LED); Nano cone

Indexed keywords

CHLORINE COMPOUNDS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDUCTIVELY COUPLED PLASMA; LIGHT SCATTERING; SELF ASSEMBLY; THIN FILMS;

AR FLOWS; GAN BASED; INDUCTIVELY COUPLED PLASMA; INDUCTIVELY COUPLED PLASMA ETCHING; INDUCTIVELY-COUPLED PLASMA; LIGHT-EMITTING DIODE; LIGHTEMITTING DIODE; NANOCONE; PROCESS CONDITION; THIN-FILMS;

LIGHT EMITTING DIODES;

EID: 55049131904     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.07.002     Document Type: Article

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