Laser liftoff GaN thin-film photonic crystal GaN-based light-emitting diodes

IEEE Photonics Technology Letters

Volumn 20, Issue 24, 2008, Pages 2096-2098

  Cho, Hyun Kyong ^a   Kim, Sun Kyung ^a   Bae, Duk Kyu ^a   Kang, Bong Cheol ^a   Lee, Jeong Soo ^a   Lee, Yong Hee ^b  

^a LG Electronics Inc   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

GaN; Laser liftoff (LLO); Light emitting diode (LED); Photonic crystal (PhC)

Indexed keywords

CORUNDUM; CRYSTAL ATOMIC STRUCTURE; CURRENT DENSITY; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; GELATION; LASERS; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTONIC CRYSTALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM DEVICES;

CONVENTIONAL PHOTOLITHOGRAPHIES; FORWARD CURRENTS; GAN; GAN-BASED LIGHT-EMITTING DIODES; LASER LIFTOFF (LLO); LIGHT EXTRACTIONS; LIGHT OUTPUT POWER; LIGHT-EMITTING DIODE (LED); MICRON-SCALE; PHOTONIC CRYSTAL (PHC); SAPPHIRE SUBSTRATES; THIN-FILM; TRAPPED LIGHTS;

OPTICAL FILMS;

EID: 59649104721     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2006506     Document Type: Article

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