Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Nanotechnology

Volumn 16, Issue 9, 2005, Pages 1844-1848

  Huang, Hung Wen ^a,b   Chu, J T ^a   Kao, C C ^a   Hseuh, T H ^a   Lu, T C ^a   Kuo, H C ^a   Wang, S C ^a   Yu, C C ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TrueLight Corp Taiwan   (Taiwan)

^c Highlink Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PHOTONS; QUANTUM EFFICIENCY; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS; SURFACE STRUCTURE;

CONTACT AREA; EXTRACTION EFFICIENCY; LASER ETCHING; METAL CLUSTERS;

LIGHT EMITTING DIODES;

EID: 23444439608     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/9/071     Document Type: Review

References (14)

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