Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: A diffraction study

Semiconductor Science and Technology

Volumn 24, Issue 4, 2009, Pages

  Wang, J X ^a,b   Laha, A ^a   Fissel, A ^a   Schwendt, D ^a   Dargis, R ^a   Watahiki, T ^c   Shayduk, R ^c   Braun, W ^c   Liu, T M ^b   Osten, H J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b CHONGQING UNIVERSITY   (China)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIXBYITE STRUCTURE; COMPRESSIVE STRAIN; CRYSTALLINITIES; DIFFRACTION METHODS; DIFFRACTION STUDIES; HIGH-ENERGY ELECTRON DIFFRACTION; IN-PLANE; IN-PLANE DIRECTION; IN-SITU; LATTICE PARAMETERS; MOLECULAR BEAM EPITAXIAL; OUT-OF-PLANE DIRECTION; OXIDE GROWTH; PSEUDOMORPHIC GROWTH; SI (1 1 1); SI SUBSTRATES; SINGLE DOMAINS; STRAIN STATE; X- RAY DIFFRACTION;

CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIFFRACTION; GADOLINIUM; LATTICE MISMATCH; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TENSILE STRAIN;

SUBSTRATES;

EID: 68949105726     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/4/045021     Document Type: Article

References (30)

1. Hong M, Kwo J, Kortan A R, Mannaerts J P and Sergent A M 1999 Science 283 1897-900
2. Osten H J, Laha A, Czernohorsky M, Bugiel E, Dargis R and Fissel A 2008 Phys. Status Solidi A 205 695-707
3. Mavrou G, Vellianitis G, Apostolopoulos G, Argyropoulos K, Dimoulas A and Scholz R 2004 Mater. Sci. Eng. B 109 39-41
4. Lay T S, Liao Y Y, Liu W D, Lai Y H, Hung W H, Kwo J, Hong M and Mannaerts J P 2003 Solid-State Electron. 47 1021-5
5. Cheng C P, Hong M, Kwo J, Cheng H M, Huang Y L, Lin S Y, Chi J, Lee H Y, Hsieh Y F and Mannaerts J P 2005 J. Cryst. Growth. 278 638-42
6. Fissel A, Osten H J and Bugiel E 2003 J. Vac. Sci. Technol. B 21 1765-72
7. Tinkham B P, Takahasi M, Jenichen B, Watahiki T, Braun W and Ploog K H 2006 Semicond. Sci. Technol. 21 1552-6
8. Osten H J, Bugiel E and Fissel A 2003 Solid-State Electron. 47 2161-5
9. Fissel A, Elassar Z, Kirfel O, Bugiel E, Czernohorsky M and Osten H J 2006 J. Appl. Phys. 99 074105
10. Dakhel A A 2004 J. Alloys Compd. 376 38-42
11. Hubbard K J and Schlom D G 1996 J. Mater. Res. 11 2757-76
12. Badylevich M, Shamuilia S, Afanas'ev V V, Stesmans A, Laha A, Osten H J and Fissel A 2007 Appl. Phys. Lett. 90 252101
13. Hong M, Kwo J, Chu S N G, Mannaerts J P, Kortan A R, Ng H M, Cho A Y, Anselm K A, Lee C M and Chyi J I 2002 J. Vac. Sci. Technol. B 20 1274-7
14. Yacoby Y, Sowwan M, Stern E, Cross J, Brewe D, Pindak R, Pitney J, Dufresne E B and Clarke R 2003 Physica B 336 39-45
15. Fissel A, Czernohorsky M and Osten H J 2006 Superlattices Microstruct. 40 551-6
16. Fissel A, Czernohorsky M and Osten H J 2006 J. Vac. Sci Technol. B 24 2115-8
17. Sun Q Q, Laha A, Ding S J, Zhang D W, Osten H J and Fissel A 2008 Appl. Phys. Lett. 92 152908
18. Czernohorsky M, Bugiel E, Osten H J, Fissel A and Kirfel O 2006 Appl. Phys. Lett. 88 152905
19. Zhu Y Y, Xu R, Chen S, Fang Z B, Xue F, Fan Y L, Yang X J and Jiang Z M 2006 Thin Solid Films 508 86-89
20. Fissel A, Kühne D, Bugiel E and Osten H J 2006 Mater. Res. Soc. Symp. Proc. 928 GG03-04
21. Ulyanenkov A 2004 Proc. SPIE 5536 1-15
22. Lin T D, Hang M C, Hsu C H, Kwo J and Hong M 2007 J. Cryst. Growth 301-302 386-9
23. Fissel A, Kühne D, Bugiel E and Osten H J 2006 J. Vac. Sci. Technol. B 24 2041
24. Tapfer L and Ploog K 1989 Phys. Rev. B 40 9802-10
25. Hong M, Kortan A R, Kwo J, Mannaerts J P, Lee C M and Chyi J I 2000 Proc. of 2000 IEEE International Symp. on Compound Semiconductors pp 495-500
26. Fissel A, Kühne D, Bugiel E and Osten H J 2006 Appl. Phys. Lett. 88 153105
27. Matthews J W and Blakeslee A E 1974 J. Cryst. Growth 27 118-25
28. Gariglio S, Stucki N, Triscone J M and Triscone G 2007 Appl. Phys. Lett. 90 202905
29. Speck J S and Pompe W 1994 J. Appl. Phys. 76 466
30. Wang J X, Laha A, Fissel A, Schwendt D, Dargis R, Watahiki T, Shayduk R, Braun W, Liu T M and Osten H J 2009 Proc. of the 4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems pp 431-5