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Volumn 47, Issue 6, 2003, Pages 1021-1025
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Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor
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Author keywords
Post metallization annealing; Si; XPS; Y2O3
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Indexed keywords
CHEMICAL BONDS;
ELECTRIC CHARGE;
ELECTRIC POTENTIAL;
INTERFACES (MATERIALS);
METALLIZING;
PHOTOELECTRON SPECTROSCOPY;
RAPID THERMAL ANNEALING;
CHARGE DENSITY;
CAPACITORS;
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EID: 0037409003
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1101(02)00467-7 Document Type: Article |
Times cited : (9)
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References (9)
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