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Volumn 46, Issue 33-35, 2007, Pages

Study of the n+ GaN cap in AlGaN/GaN high electron mobility transistors with reduced source-drain resistance

Author keywords

Access resistance; AlGaN GaN; Contact resistance; High electron mobility transistor (HEMT); n+ GaN cap; Non alloyed

Indexed keywords

CONTACT RESISTANCE; DOPING (ADDITIVES); ELECTRON GAS; HIGH ELECTRON MOBILITY TRANSISTORS; OHMIC CONTACTS; SHEET RESISTANCE;

ACCESS RESISTANCE; DELTA DOPINGS; HETEROINTERFACE;

GALLIUM NITRIDE;

EID: 34648818274 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.L842 Document Type: Article

Times cited : (11)

References (12)

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