Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 10 A, 2003, Pages

  Han, Yanjun ^a   Xue, Song ^a   Guo, Wenping ^a   Luo, Yi ^a   Hao, Zhibiao ^a   Sun, Changzheng ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

AlGaN; GaN; ICP; Selective etching

Indexed keywords

DRY ETCHING; INDUCTIVELY COUPLED PLASMA; METALLORGANIC VAPOR PHASE EPITAXY; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHAMBER PRESSURE; FLOW RATE;

GALLIUM NITRIDE;

EID: 0345376672     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1139     Document Type: Article

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