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Volumn 287, Issue 2, 2006, Pages 554-557

Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diode

Author keywords

A1. p Doping; A3. Superlattice; B1. Nitrides; B2. Piezoelectric

Indexed keywords

GALLIUM NITRIDE; NITRIDES; PIEZOELECTRIC DEVICES; SEMICONDUCTOR LASERS;

EID: 30344486678     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.070     Document Type: Conference Paper
Times cited : (12)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.