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Volumn 287, Issue 2, 2006, Pages 554-557
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Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diode
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Author keywords
A1. p Doping; A3. Superlattice; B1. Nitrides; B2. Piezoelectric
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Indexed keywords
GALLIUM NITRIDE;
NITRIDES;
PIEZOELECTRIC DEVICES;
SEMICONDUCTOR LASERS;
ELECTRICAL QUALITY;
HOLE CONCENTRATION;
P-DOPING;
SUPERLATTICE STRUCTURE;
SUPERLATTICES;
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EID: 30344486678
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.070 Document Type: Conference Paper |
Times cited : (12)
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References (11)
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