Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Lee, Chi Ling ^a   Lee, Wei I ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; GALLIUM NITRIDE; MAGNESIUM; OHMIC CONTACTS; PIEZOELECTRIC DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

BARRIER HEIGHT; INDIUM TIN OXIDE (ITO); P GAN LAYER;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 34247853479     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2737122     Document Type: Article

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