Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice

Semiconductor Science and Technology

Volumn 21, Issue 5, 2006, Pages

  Jang, Ja Soon ^a   Sohn, Seong Jin ^b   Kim, Donghwan ^a   Seong, Tae Yeon ^a  

^a Korea University   (South Korea)

^b LG Innotek Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GOLD COMPOUNDS; NICKEL COMPOUNDS; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

ANNEALED CONTACTS; CAPPING LAYER; SURFACE CARRIER CONCENTRATION;

OHMIC CONTACTS;

EID: 33645673643     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/5/L01     Document Type: Article

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