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Volumn 18, Issue 6, 2003, Pages 545-548

Tunnelling efficiency of n+-InGaN/GaN short period superlattice tunnelling contact layer for nitride-based light emitting diodes

(5) Liu, C H a Su, Y K b Wu, L W b Chang, S J b Chuang, R W b

a NAN JEON INSTITUTE OF TECHNOLOGY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON TUNNELING; FABRICATION; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SILICON;

CONTACT RESISTANCE;

LIGHT EMITTING DIODES;

EID: 0037495271 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/18/6/326 Document Type: Article

Times cited : (23)

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