Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p- In0.15 Ga0.85 Np-GaN layer

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Jang, Ja Soon ^a   Seong, Tae Yeon ^b  

^a RUTGERS UNIVERSITY   (United States)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATION; CONTACT RESISTIVITY; DIFFUSION BARRIER LAYERS; POLARIZATION EFFECT;

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; SURFACE STRUCTURE; THERMODYNAMIC STABILITY; TIN COMPOUNDS;

OHMIC CONTACTS;

EID: 33846266978     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2424320     Document Type: Article

References (18)

1. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
2. T. Mori, et al., Appl. Phys. Lett. 69, 3537 (1996).
3. J.-S. Jang, I.-S. Chang, H.-K. Kim, T.-Y. Seong, S. H. Lee, and S.-J. Park, Appl. Phys. Lett. 74, 70 (1999).
4. J.-S. Jang, S.-J. Park, and T.-Y. Seong, J. Vac. Sci. Technol. B 17, 2667 (1999).
5. J. K. Kim, J. L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. I. Kim, Appl. Phys. Lett. 73, 2953 (1998).
6. J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, C. Y. Chen, and K. K. Shih, Appl. Phys. Lett. 74, 1275 (1999).
7. Y.-L. Li, E. F. Schubert, J. W. Graff, A. Osinsky, and W. F. Schaff, Appl. Phys. Lett. 76, 2728 (2000).
8. K. Kumakura, T. Makimoto, and N. Kobayashi, Appl. Phys. Lett. 79, 2588 (2001).
9. T. Gessmann, J. W. Graff, Y.-L. Li, E. L. Waldron, and E. F. Schuber, J. Appl. Phys. 92, 3740 (2002).
10. J. K. Sheu, Y. K. Su, G. C. Chi, P. L. Koh, M. J. Jou, C. M. Chang, C. C. Liu, and W. C. Hung, Appl. Phys. Lett. 74, 2340 (1999).
11. J. K. Ho, C.-S. Jong, C. C. Chiu, C.-N. Huang, and K.-K. Shih, J. Appl. Phys. 86, 4491 (1999).
12. C.-Y. Hsu, W.-H. Lan, and Y. S. Wu, Appl. Phys. Lett. 83, 2447 (2003).
13. R.-H. Horng, D.-S. Wuu, Y.-C. Lien, and W.-H. Lan, Appl. Phys. Lett. 79, 2925 (2001).
14. S. Y. Kim, H. W. Jang, and J.-L. Lee, Appl. Phys. Lett. 82, 61 (2003).
15. T. Minami, Semicond. Sci. Technol. 20, S35 (2005).
16. G. S. Marlow and M. B. Das, Solid-State Electron. 25, 91 (1982).
17. J.-S. Jang, I.-S. Chang, H.-K. Kim, S.-H. Lee, T.-Y. Seong, and S.-J. Park, Appl. Phys. Lett. 74, 70 (1999).
18. P. Boguslawski, E. L. Briggs, and J. Bernhole, Phys. Rev. B. 51, 17255 (1995).