Polysilicon nanofilm pressure sensor

Sensors and Actuators, A: Physical

Volumn 154, Issue 1, 2009, Pages 42-45

  Liu, Xiaowei ^a,b   Lu, Xuebin ^a   Chuai, Rongyan ^c   Shi, Changzhi ^a   Suo, Chunguang ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c SHENYANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

MEMS; Piezoresistive property; Polysilicon nanofilm; Pressure sensor; Temperature characteristic

Indexed keywords

FABRICATION PROCESS; FULL SCALE; NANO FILMS; PIEZO-RESISTIVE; PIEZO-RESISTORS; PIEZORESISTIVE PROPERTY; TEMPERATURE CHARACTERISTIC; TEMPERATURE COEFFICIENT;

MEMS; MICROELECTROMECHANICAL DEVICES; POLYSILICON; PRESSURE TRANSDUCERS;

PRESSURE SENSORS;

EID: 68849121970     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2009.07.015     Document Type: Article

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