The influence of doping concentration on piezoresistive temperature characteristics of polysilicon nanofilms

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6423, Issue , 2007, Pages

  Liu, Xiaowei ^a   Lu, Xuebin ^a   Chuai, Rongyan ^b   Pan, Huiyan ^a   Wang, Xilian ^a   Li, Jinfeng ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b SHENYANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSTRUCTURE; OPTIMIZATION; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

DOPING CONCENTRATION; GAUGE FACTOR; MONOCRYSTALLINE SILICON; PIEZORESISTIVE TEMPERATURE;

THIN FILMS;

EID: 39049134514     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.779870     Document Type: Conference Paper

References (0)