메뉴 건너뛰기




Volumn 154, Issue 2, 2009, Pages 255-260

High temperature smart-cut SOI pressure sensor

Author keywords

High temperature; Piezoresistive sensor; Pressure sensor; Silicon; Smart cut SOI

Indexed keywords

ANALYTICAL MODEL; BULK SILICON; DIGITIZED CURVES; DOPING EFFECTS; HEAVILY DOPED; HIGH PRESSURE; HIGH TEMPERATURE; HIGH-TEMPERATURE ENVIRONMENT; LOW PRESSURES; MAXIMUM TEMPERATURE; ON-CHIP TEMPERATURE; OPERATING TEMPERATURE; PIEZORESISTIVE PRESSURE SENSORS; PIEZORESISTIVE SENSOR; RESISTANCE VALUES; SINGLE CRYSTAL SILICON; SMART-CUT; SMART-CUT SOI; SOI WAFERS;

EID: 69549103089     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2009.03.011     Document Type: Article
Times cited : (86)

References (19)
  • 2
    • 69549112003 scopus 로고    scopus 로고
    • Hermetically Sealed Ultra High Temperature Silicon Carbide Pressure Transducers and Method for Fabricating Same,
    • US patent 6,058,782
    • D.K. Anthony, A.N. Alexander, Hermetically Sealed Ultra High Temperature Silicon Carbide Pressure Transducers and Method for Fabricating Same, US patent 6,058,782 (2000).
    • (2000)
    • Anthony, D.K.1    Alexander, A.N.2
  • 4
    • 50149107198 scopus 로고    scopus 로고
    • Pressure Sensor,
    • US patent 6,928,878
    • Harald Eriksen Shuwen Guo, Pressure Sensor, US patent 6,928,878 (2004).
    • (2004)
    • Eriksen, H.1    Guo, S.2
  • 5
    • 50149106308 scopus 로고    scopus 로고
    • Semiconductor Nitride Pressure Microsensor and Method of Making and Using The same,
    • US patent 6,647,796
    • R. Beach, R.P. Strittmatter, T.C. McGill, Semiconductor Nitride Pressure Microsensor and Method of Making and Using The same, US patent 6,647,796 (2003).
    • (2003)
    • Beach, R.1    Strittmatter, R.P.2    McGill, T.C.3
  • 7
    • 50149103540 scopus 로고
    • Strain Gage Sensor With Integral Temperature Signal,
    • US patent 5,343,755
    • G.H. Charles, Strain Gage Sensor With Integral Temperature Signal, US patent 5,343,755 (1994).
    • (1994)
    • Charles, G.H.1
  • 10
    • 4644231971 scopus 로고    scopus 로고
    • Measurement of the silicon resistivity at very high temperature with junction isolated van der Pauw structures
    • Proceedings of the 21st IEEE, 1, 18-20
    • Corvasce C., Ciappa M., Barlini D., Illien F., and Fichtner W. Measurement of the silicon resistivity at very high temperature with junction isolated van der Pauw structures. Instrumentation and Measurement Technology Conference, IMTC 04. Proceedings of the 21st IEEE, 1, 18-20 (2004) 133-138
    • (2004) Instrumentation and Measurement Technology Conference, IMTC 04. , pp. 133-138
    • Corvasce, C.1    Ciappa, M.2    Barlini, D.3    Illien, F.4    Fichtner, W.5
  • 12
    • 4944230182 scopus 로고    scopus 로고
    • Modeling of temperature sensor built on thin silicon on insulator using advanced carrier-mobility model
    • Wu Z.H., and Laia P.T. Modeling of temperature sensor built on thin silicon on insulator using advanced carrier-mobility model. Journal of Applied Physics 96 5 (2004) 2955-2960
    • (2004) Journal of Applied Physics , vol.96 , Issue.5 , pp. 2955-2960
    • Wu, Z.H.1    Laia, P.T.2
  • 14
    • 0042819652 scopus 로고    scopus 로고
    • Minority-carrier exclusion effect in thin-film SOI temperature sensor
    • Bin L., Peitao L., Baiyong L., and Xueren Z. Minority-carrier exclusion effect in thin-film SOI temperature sensor. Chinese Journal of Semiconductors 24 5 (2003) 461-465
    • (2003) Chinese Journal of Semiconductors , vol.24 , Issue.5 , pp. 461-465
    • Bin, L.1    Peitao, L.2    Baiyong, L.3    Xueren, Z.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.