Gauge factor and nonlinearity of p-type polysilicon nanofilms

Advanced Materials Research

Volumn 60-61, Issue , 2009, Pages 84-88

  Liu, Xiaowei ^a,b   Lu, Xuebin ^a   Chuai, Rongyan ^c   Shi, Changzhi ^a   Huo, Mingxue ^a   Chen, Weiping ^a,b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c SHENYANG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Doping concentration; Gauge factor; Nanofilms; Nonlinearity; Polysilicon; Tunneling piezoresistive theory

Indexed keywords

GRAIN BOUNDARIES; NANOSENSORS; NANOTECHNOLOGY; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTOR DOPING;

DOPING CONCENTRATION; GAUGE FACTORS; NANO FILMS; NONLINEARITY; PIEZO-RESISTIVE;

GAGES;

EID: 68849101011     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/amr.60-61.84     Document Type: Conference Paper

References (12)

1. Seto J. Y. W.: Journal of Applied Physics. Vol. 47 (1976), p. 4780
2. French P. J. and Evans A. G. R.: Sensors and Actuators. Vol. 7 (1985), p. 135
3. Liu Xiaowei, Huo Mingxue, Chen Weiping, Wang Donghong, and Zhang Ying: Chinese Journal of Semiconductors. Vol. 25 (2004), p. 292
4. Xiaowei Liu, Xuebin Lu, Rongyan Chuai, Huiyan Pan, Xilian Wang, and Jinfeng Li: Proceeding of SPIE. Vol. 6423 (2007), p. 2N-1
5. Chuai Rongyan, Liu Xiaowei, Huo Mingxue, Song Minghao, Wang Xilian, and Pan Huiyan: Chinese Journal of Semiconductors. Vol. 27 (2006), p. 25
6. Chuai Rongyan, Liu Xiaowei, Pan Huiyan, Wang Wei, and Zhang Ying: Chinese Journal of Sensors and Actuators. Vol. 19 (2006), p. 1810
7. Lindhand J., Scharff M., and Schiott H. E.: Mat. Fys. Med. Dan. Vid. Selsk. Vol. 33 (1963), p. 1
8. He P. J., Chen C. Y, and Wang D. H.: Journal of Transducer Technology, Vol. 18 (1999), p. 26
9. Baccarani G., Ricco B., and Spadini G.: Journal of Applied Physics. Vol. 49 (1978), p. 5565
10. Schubert D., Jenschke W., and Uhlig T.: Sensors and Actuators. Vol. 11 (1987), p. 145
11. Yu Ningmei, Gao Yong, and Chen Zhiming: Chinese Journal of Semiconductors. Vol. 22 (2001), p. 511
12. Suzuki Z., Hasegawa C., and Kanda Y.: Journal of Applied Physics. Vol. 23 (1984), p. L871