Influence of substrate temperature on formation of ultrananocrystalline diamond films deposited by HFCVD argon-rich gas mixture

Diamond and Related Materials

Volumn 18, Issue 10, 2009, Pages 1283-1288

  Barbosa, D C ^a   Almeida, F A ^b   Silva, R F ^b   Ferreira, N G ^a   Trava Airoldi, V J ^a   Corat, E J ^a  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

Activation energy; Diamond; Growth kinetics; HFCVD; sp2 growth

Indexed keywords

CHARACTERIZATION STUDIES; DEPOSITION TEMPERATURES; DEPOSITION TIME; DIAMOND DEPOSITION; DIAMOND GROWTH; HFCVD; HIGH GROWTH; HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPIES; HIGH-RESOLUTION X-RAY DIFFRACTOMETRY; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; MASS GROWTH; RAMAN SCATTERING SPECTROSCOPY; SP2 GROWTH; SUBSTRATE TEMPERATURE; TOTAL PRESSURE; ULTRANANOCRYSTALLINE DIAMOND FILMS; ULTRANANOCRYSTALLINE DIAMONDS;

ACTIVATION ENERGY; ARGON; ARRHENIUS PLOTS; BIOACTIVITY; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIAMOND DEPOSITS; DIAMONDS; ELECTRON ENERGY LOSS SPECTROSCOPY; GAS MIXTURES; GROWTH KINETICS; HIGH RESOLUTION ELECTRON MICROSCOPY; HYDROGEN; METHANE; NANOCRYSTALLINE MATERIALS; SCANNING; SCANNING ELECTRON MICROSCOPY; SUBSTRATES;

DIAMOND FILMS;

EID: 68749103236     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.05.002     Document Type: Article

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