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Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 1005-1009

Effect of GaN buffer layers on the polarity and properties of ZnO epilayers on nitrided c-Al2O3 by MBE

(5) Roh, O H a Wang, X c Che, S B a,b,c Ishitani, Y a,b,c Yoshikawa, A a,b,c

a CHIBA UNIVERSITY (Japan)

b Department of Electronics and Mechanical Engineering ^* (Japan)

c CHIBA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; THERMAL EFFECTS; ZINC OXIDE; BUFFER LAYERS; EPILAYERS; GALLIUM NITRIDE; OPTICAL WAVEGUIDES; STRAIN; ZINC;

DONOR-BOUND EXCITON; GAN BUFFER LAYER; REFLECTANCE SPECTRA;

GALLIUM NITRIDE; ZINC OXIDE;

61.10.NZ; 68.37.PS; 78.40.FY; 78.55.ET; 81.15.HI;

EID: 33646244488 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200564703 Document Type: Conference Paper

Times cited : (2)

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