SCOPUS 정보 검색 플랫폼

Volumn 311, Issue 3, 2009, Pages 456-458

Growth and in-plane optical anisotropy of crystalline quality enhanced non-polar m-plane ZnO(GaN) films on trenched (1 0 0) LiAlO2 substrates

(4) Lin, Hui a,b Zhou, Shengming a Teng, Hao a,b Wang, Jun a

a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

A1. Characterization; A1. Substrates; A3. Vapor phase epitaxy; B1. ZnO films

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; METALLIC FILMS; OPTICAL ANISOTROPY; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; VAPORS; ZINC OXIDE;

A1. CHARACTERIZATION; A1. SUBSTRATES; A3. VAPOR-PHASE EPITAXY; B1. ZNO FILMS; CRYSTALLINE QUALITIES; FREQUENCY SHIFTS; FULL WIDTH AT HALF-MAXIMUM; IN PLANES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; NEAR BAND-EDGE EMISSIONS; NON-POLAR; OPTICAL TRANSMISSION SPECTRUM; PHOTOLUMINESCENCE SPECTRUM; POLARIZED RAMAN SPECTRUM; RAMAN SPECTRUM; ROCKING CURVES; X- RAY DIFFRACTIONS; ZNO; ZNO THIN FILMS;

OPTICAL FILMS;

EID: 59749084359 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.09.015 Document Type: Article

Times cited : (6)

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