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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 1874-1880

Scanning tunneling microscope-cathodoluminescence measurement of the GaAs/AlGaAs heterostructure

(6) Watanabe, Kentaro a Nakamura, Yoshiaki a,b Ichikawa, Masakazu a Kuboya, Shigeyuki a,c Katayama, Ryuji a Onabe, Kentaro a

a UNIVERSITY OF TOKYO (Japan)

b OSAKA UNIVERSITY (Japan)

c Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANGULAR DEVIATIONS; DOMINANT CONTRIBUTIONS; EXCITATION SOURCES; FIELD-EMISSION ELECTRONS; GAAS/ALGAAS; HETEROSTRUCTURES; LOW ENERGIES; MINORITY CARRIER; MULTILAYER STRUCTURES; SCANNING TUNNELING MICROSCOPES; SPATIAL RESOLUTION; SURFACE NORMALS; THERMALIZATION;

CATHODOLUMINESCENCE; ELECTRON BEAMS; EMISSION SPECTROSCOPY; FIELD EMISSION; IMAGE RESOLUTION; LIGHT EMISSION; OPTICAL PROPERTIES; SCANNING; WIND TUNNELS;

ELECTRON EMISSION;

EID: 68349133808 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3155827 Document Type: Article

Times cited : (6)

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